4.7 Article

Deep Eutectic Solvent-Assisted Microwave Synthesis of Thermoelectric AgBiS2 and Cu3BiS3

Journal

ACS APPLIED ENERGY MATERIALS
Volume 5, Issue 12, Pages 14858-14868

Publisher

AMER CHEMICAL SOC
DOI: 10.1021/acsaem.2c02336

Keywords

deep eutectic solvent; thermoelectric; polymorph; microwave synthesis; sulfides

Funding

  1. Iowa State University
  2. U.S. Department of Energy, Office of Science, Office of Basic Energy Sciences
  3. [DE-AC02-06CH11357]

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AgBiS2 and Cu3BiS3 were successfully synthesized via a microwave-assisted solution route using a deep eutectic solvent (DES). The DES synthesis provides a fast, environmentally friendly, and low-temperature alternative to high-temperature (HT) synthesis. The Cu3BiS3 polymorphic transition and the thermal stability of AgBiS2 were observed during the study.
AgBiS2 and Cu3BiS3 were synthesized via a microwave-assisted solution route using a deep eutectic solvent (DES). The DES of choice consists of choline chloride and thiourea, with thiourea acting as a sulfur source. The DES synthesis route provides a fast, environmentally friendly, and low-temperature alternative to high-temperature (HT) synthesis. We compared DES synthesis to the synthesis from an aqueous solution and determined that the DES is preferred for the synthesis of Cu3BiS3, while deionized water is the better solvent for the microwave-assisted synthesis of AgBiS2. The syntheses of AgBiS2 and Cu3BiS3 proceed via Bi2S3 intermediate that reacts with the +1 cations in solution when synthesis is carried out in DES or water. The DES synthesis yields similar to 0.5 mu m particles with a rod-like (AgBiS2) or rock-like (Cu3BiS3) morphology. The measured optical indirect band gap is 0.9 eV for AgBiS2 and 1.21 eV for Cu3BiS3. AgBiS2 powder is thermally stable in vacuum up to 700 degrees C as opposed to Cu3BiS3 powder. In situ HT powder X-ray diffraction revealed that Cu3BiS3 shows structural transitions upon heating. The transformation of Cu3BiS3 from the room-temperature P2(1)2(1)2(1) polymorph to the HT polymorph occurs between 100 and 122 degrees C. The HT polymorph is stable until 476 degrees C and completely decomposes to crystalline Cu2S and Bi2S3 melt at 527 degrees C. The Cu3BiS3 polymorphic transition at 100 degrees C is evident from the measured Seebeck coefficient, resistivity, and thermal conductivity. Cu3BiS3 is a p-type semiconductor. The thermoelectric figure of merit, zT, at 230 degrees C of the DES-synthesized Cu3BiS3 is comparable to the previously reported thermoelectric properties of the Cu3BiS3 synthesized via the HT route from elements.

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