Journal
SOLAR RRL
Volume 7, Issue 3, Pages -Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/solr.202200995
Keywords
KNBNNO; perovskites; photodielectrics; photoferroelectrics; photoluminescence; photosensors
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This article introduces a simple mechanism using a monolithic, bandgap-engineered photoferroelectric ceramic to blindly measure the wavelength and intensity of incident light. The photoferroelectric compound, Ba- and Ni-doped (K, Na)NbO3, exhibits a direct bandgap of approximately 2 eV and a spontaneous polarization of approximately 0.25 C m(-2), allowing reliable distinction of wavelengths and power density. The proposed alternative offers filterless, wavelength-selective photodetection and color sensing.
Photosensors, photodetectors, or color sensors are key components for various optical and optoelectronic applications. Semiconductor-based photodetection has been a dominator which is excellent at measuring the photon intensity of incident light. However, the wavelength of the incident light to be measured must be known beforehand and it mostly depends on auxiliary methods to filter unknown wavelengths. Herein, an alternative but simple mechanism that is using a monolithic, bandgap-engineered photoferroelectric ceramic to blindly determine the wavelength and intensity of incident light at the same time is demonstrated. The photoferroelectric compound is Ba- and Ni-codoped (K,Na)NbO3 exhibiting a direct bandgap of approximate to 2 eV and a spontaneous polarization of approximate to 0.25 C m(-2). The band-band charge carrier transition is confirmed by multiple characterization methods of photoluminescence, photodielectric spectroscopy, and photoconductivity. The existent optoelectrical cumulative effect enabled by the simultaneous narrow bandgap and strong ferroelectricity allows to reliably distinguish the wavelengths of 405, 552, and 660 nm as well as the power density ranging from approximate to 0.1 to 10 W cm(-2), with the photoresponsivity of up to 60 mu A W-1. Consequently, this work proposes an alternative to semiconductor-based counterparts for filterless, wavelength-selective photodetection and color sensing.
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