Journal
MATERIALS TODAY PHYSICS
Volume 31, Issue -, Pages -Publisher
ELSEVIER
DOI: 10.1016/j.mtphys.2023.100989
Keywords
Thermoelectric semiconductor; Effective Merit Parameter B*; Uplimit (ZT)max
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Thermoelectric materials are of great interest for their ability to convert thermal energy and electrical power. New materials and strategies are being explored to achieve high values of ZT, a key parameter for thermoelectric materials. This study shows that (ZT)max has a nearly linear relationship with B*, which combines mobility, thermal conductivity, and bandgap into a single parameter. The authors suggest that pursuing high values of U*, large bandgap, and low lattice thermal conductivity can lead to high B*, making it an effective screening parameter for new thermoelectric materials.
Thermoelectric materials directly convert thermal energy and electrical power, attracting wide attention. New materials and new strategies to pursue a high ZT value mark the progress of thermoelectric materials. However, the critical factors relative to a given material's uplimit (ZT)max in the dual-parameter space of temperature carrier concentration are still an open question. In this work, we theoretically show that (ZT)max has a proxi-mately linear relationship with B* that connects the weighted mobility, lattice thermal conductivity, and the bandgap in a single parameter. We also provide insight discussion for achieving a high B* by pursuing high U*, large Eg, and low Klat, or breaking the connections among Klat versus U*, Eg versus Klat, U* versus Eg, suggesting that B* is a good primary effective merit parameter for quick screening new thermoelectric materials.
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