Robust approach towards wearable power efficient transistors with low subthreshold swing

Article Chemistry, Multidisciplinary

Complementary Metal-Oxide-Semiconductor Compatible 2D Layered Film-Based Gas Sensors by Floating-Gate Coupling Effect

Po-Hung Tan et al.

Summary: A gas detector based on 2D SnSe2 layered film, with high sensitivity, wide dynamic range, and real-time response, is proposed in this study. The detector's performance is comparable to other state-of-the-art gas sensors.

ADVANCED FUNCTIONAL MATERIALS (2022)

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Review Physics, Applied

Evolution of patterning materials towards the Moore's Law 2.0 Era

Dario L. Goldfarb

Summary: This paper reviews the use of lithographic materials in semiconductor patterning applications and discusses different types of photoresist platforms. It also explores the shift from Moore's Law 1.0, which focused on increasing the number of components on a chip, to Moore's Law 2.0, which emphasizes 3D scaling and integration of new technologies such as AI and 3D packaging.

JAPANESE JOURNAL OF APPLIED PHYSICS (2022)

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Article Chemistry, Physical

Nanowire Array-based MOSFET for Future CMOS Technology to Attain the Ultimate Scaling Limit

Krutideepa Bhol et al.

Summary: Silicon nanowire (SiNW) structures play a crucial role in the field of electronic devices, with superior performance and potential. This paper investigates the performance of a silicon nanowire (Si NW) array-based GAA MOSFET using a quantum transport model, discussing its advantages and potential applications in lower technology nodes.

SILICON (2022)

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Article Engineering, Electrical & Electronic

InSb/Si Heterojunction-Based Tunnelling Field-Effect Transistor with Enhanced Drive Current and Steep Switching

Sukanta Kumar Swain et al.

Summary: A simulation study was conducted on an InSb/Si heterojunction-based TFET with drain doping engineering and an asymmetric gate structure to achieve high ON current and low subthreshold swing. Improvements in the I-ON/I-OFF ratio were achieved by incorporating an n+ pocket towards the drain and InSb towards the source. The proposed TFET structure demonstrated reduced average subthreshold swing and lower OFF current with suppressed ambipolar behavior, making it suitable for high-performance, ultralow-power applications.

JOURNAL OF ELECTRONIC MATERIALS (2022)

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Article Physics, Condensed Matter

Interface effects of Schottky devices built from MoS2 and high work function metals

Y. D. Li et al.

Summary: Schottky junctions formed by high work function metals and semiconductors have important applications in electronics and optoelectronics. Traditional Schottky interfaces can be damaged during metal deposition, but this issue is avoided by using atomically smooth interfaces formed by two-dimensional metals and semiconductors. In this study, we fabricated and tested three types of MoS2 devices with different contact materials (PtTe2, Cr, and Au), and found that the van-der-Waals interface of PtTe2-MoS2 exhibited excellent performance in the OFF state and rectification ratio.

JOURNAL OF PHYSICS-CONDENSED MATTER (2022)

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Article Engineering, Electrical & Electronic

Comprehensive performance enhancement of a negative-capacitance nanosheet field-effect transistor with a steep sub-threshold swing at the sub-5-nm node

Weifeng Lu et al.

Summary: A comparison between a negative-capacitance nanosheet field-effect transistor (NC-NSFET) and a negative-capacitance fin field-effect transistor (NC-FinFET) was conducted to evaluate their performance. The results showed that the NC-NSFET outperformed the NC-FinFET in terms of on-current to-off-current ratio, sub-threshold swing, and drain-induced barrier lowering. The NC-NSFET also exhibited higher transconductance and cutoff frequency at lower drain voltage. Additionally, a negative correlation between cutoff frequency and sub-threshold swing was discovered for the first time.

MICROELECTRONICS JOURNAL (2022)

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Article Nanoscience & Nanotechnology

Analysis of Schottky barrier heights and reduced Fermi-level pinning in monolayer CVD-grown MoS2 field-effect-transistors

Jing Xie et al.

Summary: This paper explores the electrical characteristics of CVD-grown ML MoS2 and its metal contacts, comparing the properties of CVD-grown samples with exfoliated samples through statistical analysis.

NANOTECHNOLOGY (2022)

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Article Chemistry, Analytical

Comprehensive Schottky Barrier Height Behavior and Reliability Instability with Ni/Au and Pt/Ti/Pt/Au on AlGaN/GaN High-Electron-Mobility Transistors

Surajit Chakraborty et al.

Summary: The reliability instability of inhomogeneous Schottky contact behaviors of Ni/Au and Pt/Ti/Pt/Au gate contacts on AlGaN/GaN high-electron-mobility transistors (HEMTs) was investigated via off-state stress and temperature. The Pt/Ti/Pt/Au HEMT showed a reduced reverse leakage current under off-state stress condition, while the Ni/Au HEMT showed an increased reverse leakage current. As the temperature increased, the reverse leakage current of the Pt/Ti/Pt/Au HEMT decreased, while that of the Ni/Au HEMT increased. However, at temperatures exceeding 308 K, the reverse leakage current of the Pt/Ti/Pt/Au HEMT increased, which could be intensified using the inverse piezoelectric effect.

MICROMACHINES (2022)

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Article Nanoscience & Nanotechnology

Deep-Submicrometer Complementary Metal-Oxide-Semiconductor Transistors Based on Carbon Nanotube Films

Huiwen Shi et al.

Summary: Semiconducting carbon nanotube films are promising channel materials for constructing CMOS field-effect transistors, but the poor performance of short channel n-type FETs has hindered the development of truly symmetric CMOS FETs. By using scandium contacts and doping channels, high-performance and symmetrical CMOS FETs with a deep submicrometer gate length were fabricated for the first time, showing significant improvements in on-state current and transconductance compared to previous CNT CMOS FETs.

ADVANCED ELECTRONIC MATERIALS (2022)

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Article Nanoscience & Nanotechnology

Flexible Diodes with Low Breakdown Voltage for Steep Slope Transistors and One Diode-One Resistor Applications

Jamal Aziz et al.

Summary: The study demonstrates the potential applications of transparent and flexible diodes in electronic devices, showing stable performance and mechanical endurance.

ADVANCED ELECTRONIC MATERIALS (2022)

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Article Chemistry, Multidisciplinary

Ultra-Steep-Slope High-Gain MoS2 Transistors with Atomic Threshold-Switching Gate

Jun Lin et al.

Summary: This study demonstrates ultra-low subthreshold swing (SS) and ultra-steep slope by integrating atomic-scale resistive filament with conventional MoS2 transistors. The nanoscale resistive filament ensures rapid device switching, leading to ultra-steep SS. The study also shows high on/off ratio and superior reproducibility and reliability. These findings provide exciting potential for future low-power electronics and monolithic integration.

ADVANCED SCIENCE (2022)

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Article Engineering, Electrical & Electronic

Sub-10 nm Top Width Nanowire InGaAs Gate-All-Around MOSFETs With Improved Subthreshold Characteristics and Device Reliability

Hua-Lun Ko et al.

Summary: This article demonstrates improved subthreshold characteristics and reliability of sub-10 nm top width nanowire In0.53Ga0.47As gate-all-around (GAA) MOSFETs. The devices show significant improvement in subthreshold performances and effective control of short channel effects. Low degradation of subthreshold swing and threshold voltage shift is achieved under gate bias stress due to N-2 RP treatment. These results indicate that the developed GAA MOSFET devices have great potential for future low-power high-switching speed CMOS logic applications.

IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY (2022)

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Article Engineering, Electrical & Electronic

Analysis and Parameter Optimization of High Dynamic Range Pixels for Split Photodiode in CMOS Image Sensors

Jiangtao Xu et al.

Summary: This study investigates the mechanism of extending dynamic range using split photodiode, dual conversion gain, and LOFIC technology. A mathematical model is established to describe the relationship between responsivity ratio, LOFIC, conversion gain, and voltage swing, and their effects on dynamic range. The research shows that dynamic range increases with responsivity ratio and LOFIC, but is restricted by signal-to-noise ratio at signal switching points.

IEEE SENSORS JOURNAL (2022)

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Article Engineering, Electrical & Electronic

Enhancing the electronic properties of the graphene-based field-effect transistor via chemical doping of KBr

Muhammad Waqas Iqbal et al.

Summary: Chemical doping with Potassium Bromide (KBr) solution is shown to be an effective technique to improve the electrical properties of monolayer graphene. The study reveals that KBr doping enhances the mobility of graphene and shifts the charge neutrality point towards negative gate voltage, indicating n-type doping.

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS (2022)

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Article Physics, Multidisciplinary

P-type doping induced performance improvement of two-dimensional SiC transistors with 1T-phase MoS2 electrode

Hai-Qing Xie et al.

Summary: The performance of a 2D SiC Schottky-Barrier field effect transistor (SBFET) with different concentrations of p-type doping in the source/drain region was investigated using nonequilibrium Green's functions and density-functional theory. The study found that the hole Schottky barrier height decreases with increasing p-type doping concentration. The SBFETs with different doping concentrations were shown to meet the high-performance standards outlined by the International technology road-map for semiconductors (ITRS) for the 2028 horizon, with satisfactory ON-state current and other performance parameters.

PHYSICS LETTERS A (2022)

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Article Chemistry, Physical

Application of an in-house developed complementary metal-oxide-semiconductor-based optical computed tomography (CMOS-OCT) imaging system for stereotactic radiosurgery dosimetry using a PRESAGE® dosimeter

Hafiz M. Zin et al.

RADIATION PHYSICS AND CHEMISTRY (2022)

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Article Engineering, Electrical & Electronic

Device operation and physical mechanism of asymmetric junctionless tunnel field-effect transistors designed to suppress coupled short-channel/short-drain effects and promote on-current switching for ultralow-voltage CMOS applications

Yu-Hsuan Chen et al.

Summary: This study numerically examined a Si-based asymmetric junctionless TFET (AJ-TFET) architecture for suppressing coupled short-channel and short-drain effects in and improving the on-current switching of TFET devices for ultralow-voltage CMOS applications. The results revealed that the AJ-TFET exhibited considerably lower swing levels and higher current levels compared to conventional PIN-TFETs, offering promising candidates for use in ultralow-voltage energy-efficient applications.

SEMICONDUCTOR SCIENCE AND TECHNOLOGY (2022)

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Article Chemistry, Physical

Implementation and Performance Evaluation of Ferroelectric Negative Capacitance FET

R. Deepa et al.

Summary: With the increasing power dissipation of nanoscale transistors, the advancement of CMOS technology is in danger. In a recent study, it was found that the negative capacitance state of an isolated ferroelectric capacitor can be identified quickly when it is switched on. By increasing the ferroelectric volume fraction, domain walls expand rapidly, resulting in a negative capacitance signature. Understanding the connection between ferroelectric materials, interfacial oxides, and semiconductors, as well as achieving negative capacitance values, is crucial for optimized design and avoiding hysteresis issues. Leveraging the negative capacitance effect of ferroelectric oxides can significantly reduce power dissipation in nanoscale semiconductor transistors.

SILICON (2022)

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Article Chemistry, Physical

Power efficient transistors with low subthreshold swing using abrupt switching devices

Jamal Aziz et al.

Summary: With the development of transparent integrated circuits, low subthreshold swing transistors have become increasingly important. Researchers have fabricated three different transparent device structures and connected them to conventional field effect transistors to reduce the swing value. By using these devices, transistors with ultra-steep slopes and high on/off ratios can be achieved, attracting attention for low power operations.

NANO ENERGY (2022)

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Article Engineering, Electrical & Electronic

Chip-scale Floquet topological insulators for 5G wireless systems

Aravind Nagulu et al.

Summary: This study reports the development of photonic Floquet topological insulators based on quasi-electrostatic wave propagation. These insulators can be used to create chip-scale antenna interfaces for 5G phased-array applications and wideband impulse radar beamforming. The devices exploit time modulation to operate beyond the delay-bandwidth limit of conventional electromagnetic structures, providing large delays.

NATURE ELECTRONICS (2022)

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Article Nanoscience & Nanotechnology

Lateral PIN (p-MoTe2/Intrinsic-MoTe2/n-MoTe2) Homojunction Photodiodes

Sikandar Aftab et al.

Summary: This study demonstrates the possibility of constructing high-performance high-speed electronic devices using a single two-dimensional semiconductor through carrier type band modulation. By sandwiching two different polarities of two-dimensional semiconductors between an intrinsic FET, a p-i-n homojunction diode is successfully fabricated, showing ideal rectifying behavior and excellent photodetection performance.

ACS APPLIED NANO MATERIALS (2022)

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Article Engineering, Electrical & Electronic

Near-Ideal Subthreshold Swing in InAlN/GaN Schottky Gate High Electron Mobility Transistor Using Carbon-Doped GaN Buffer

Sujan Sarkar et al.

Summary: This work presents a comparative study of the subthreshold swing (SS) in InAlN/GaN-based high electron mobility transistor (HEMT), with and without carbon doping in the buffer layer. It is observed that devices with carbon-doped (C-doped) buffer exhibit near-ideal SS over a wide range of drain voltage for both up and downsweep. TCAD simulation shows that the C-doped buffer layer reduces reverse-biased gate leakage current and the overall capacitance, resulting in improved SS.

IEEE TRANSACTIONS ON ELECTRON DEVICES (2022)

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Article Chemistry, Physical

Impact of Ag doping on subthreshold conduction in amorphous Ga2Te3 with threshold switching

Jaeyeon Kim et al.

Summary: Threshold switching devices with Ag-doped amorphous chalcogenides exhibit improved threshold switching characteristics, including high selectivity and low subthreshold current. The study investigates the effects of Ag doping in amorphous Ga2Te3, revealing the formation of Ag-Te bonds and a decrease in Te-Te bonds. Additionally, Ag doping leads to an increase in the optical bandgap and a decrease in Urbach energy. The subthreshold current of Ag-doped Ga2Te3 devices is reduced by a factor of seven, indicating increased selectivity. Furthermore, analysis using a thermally assisted hopping model shows a decrease in the density of localized states. Therefore, the enhanced threshold switching characteristics of Ag-doped Ga2Te3 are attributed to the reduction of Te-induced localized states and the formation of Ag-Te bonds.

JOURNAL OF ALLOYS AND COMPOUNDS (2022)

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Article Engineering, Electrical & Electronic

Experimental and theoretical insights into electronic properties of oxygen-doped MoTe2 field effect transistor

Muhammad Waqas Iqbal et al.

Summary: The electrical and photo-electrical properties of multilayer MoTe2-FETs were modulated by gas doping and deep ultra-violet light treatment. Oxygen doping induced a p-type doping effect, resulting in an increase in the mobility and current ON/OFF ratio of the devices.

MICROELECTRONIC ENGINEERING (2022)

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Article Engineering, Electrical & Electronic

Complementary Metal Oxide Semiconductor-Compatible Top-Down Fabrication of a Ni/NiO Nanobeam Room Temperature Hydrogen Sensor Device

Kusuma M. B. Urs et al.

Summary: This letter reports a suspended Ni/NiO nanobeam gas sensor device with selective response to hydrogen gas at room temperature. The selective response is a nearly 50% change in resistance for 5000 ppm of H-2 at 25 degrees C in plasma-oxidized-sputtered Ni films.

ACS APPLIED ELECTRONIC MATERIALS (2022)

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Review Materials Science, Multidisciplinary

Electrical characterization of 2D materials-based field-effect transistors

Sekhar Babu Mitta et al.

Summary: 2D materials, with their atomic thinness and rich electronic band structure, show great promise for future nanoelectronics; however, the electrical characterization methods for 2D devices need to be revisited to ensure accuracy and applicability.

2D MATERIALS (2021)

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Review Engineering, Electrical & Electronic

Suspended graphene electromechanical switches for energy efficient electronics

Thomas Szkopek et al.

Summary: Enhancing energy efficiency of electronics is a significant challenge in semiconductor device physics, especially with the increasing global energy consumption by electronics and growing reliance on information technology. Monolayer graphene, with its low elastic modulus and adhesion energy, is an ideal material for developing electromechanical switches with low-voltage operation. Progress in the development of low-voltage graphene electromechanical switches is reviewed in this article, covering motivation, thermodynamic limits, and the scaling of on/off current ratio with voltage, as well as theoretical models and experimental work towards realizing suspended graphene switches.

PROGRESS IN QUANTUM ELECTRONICS (2021)

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Article Materials Science, Multidisciplinary

Tailoring the d-band center of N-doped carbon nanotube arrays with Co4N nanoparticles and single-atom Co for a superior hydrogen evolution reaction

Bo Cao et al.

Summary: A 3D self-supported integrated electrode with Co4N nanoparticles and single-atom Co exhibits robust performance for the hydrogen evolution reaction due to its abundance of active sites and synergistic effects among components, optimizing the d-band center for efficient electrocatalysis.

NPG ASIA MATERIALS (2021)

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Review Chemistry, Multidisciplinary

Emerging Opportunities for 2D Semiconductor/Ferroelectric Transistor-Structure Devices

Zheng-Dong Luo et al.

Summary: Semiconductor technology is rapidly evolving, with potential for revolutionary innovations at the material and working principle level. The combination of 2D semiconductors and functional ferroelectrics offers new working principles and enhanced device performance, with the possibility of applications beyond traditional silicon systems. Recent demonstrations of novel device concepts based on 2D semiconductor/ferroelectric heterostructures are critically reviewed, highlighting their potential for driving exciting innovations in modern electronics.

ADVANCED MATERIALS (2021)

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Article Materials Science, Multidisciplinary

Effect of oxygen stoichiometry on the threshold switching of RF-sputtered NbOx (x=2.0-2.5) films

Jamal Aziz et al.

Summary: This study investigates the Poole-Frenkel induced threshold switching characteristics of niobium dioxide films through tuning oxygen stoichiometry. By choosing tungsten as the top electrode and altering oxygen flux during deposition, Nb2O5 is successfully transformed into NbO2, leading to stable threshold switching with good thermal stability. Increasing O-2 flux during deposition results in enhanced selectivity, threshold voltage, and off-state resistance in these devices, making them suitable for RRAM and neuromorphic computing applications.

MATERIALS RESEARCH BULLETIN (2021)

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Article Engineering, Electrical & Electronic

Advancement and challenges in MOSFET scaling

R. K. Ratnesh et al.

Summary: This study focuses on the field effect transistors (FET) and their technologies, particularly in the context of very large integration. It addresses the limitations of scaling, ways to resolve them, and includes detailed research on nanoscale transistors like silicon nanowires. The findings are valuable for advancing MOSFET technology and hint at possible future technologies.

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING (2021)

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Article Engineering, Electrical & Electronic

Compositional dynamics of the electron transport layer (ZnO:PEIE) in P3HT:PC61BM organic solar cells

Kalyani D. Kadam et al.

Summary: The study compared zinc oxide (ZnO) and zinc oxide:Polyethylenimine ethoxylated (ZnO: PEIE) nanocomposite as an electron transport layer (ETL), finding that 0.4 wt% PEIE doping and 150 degrees C annealing temperature showed superior performance for devices. The introduction of PEIE promoted charge transport by decreasing the work function of ZnO, resulting in improved conductivity and current density. Annealing temperature plays a key role in enhancing the crystallinity of the ETL and improving device efficiency for organic solar cells.

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING (2021)

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Article Chemistry, Multidisciplinary

Gate-controlled MoTe2 homojunction for sub-thermionic subthreshold swing tunnel field-effect transistor

Ngoc Thanh Duong et al.

Summary: The developed MoTe2 homojunction-based TFET shows promising performance with significantly low sub-thermal swing, high on/off current ratio, strong air stability, and lower supply voltage compared to Silicon technology. This study represents a strategy for van der Waals heterostructure assembly and demonstrates significant progress in TFET research.

NANO TODAY (2021)

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Article Chemistry, Multidisciplinary

Stable and Multilevel Data Storage Resistive Switching of Organic Bulk Heterojunction

Harshada Patil et al.

Summary: The study demonstrated bipolar resistive switching in an Ag/ZnO/P3HT-PCBM/ITO device, showing good performance and stability, with potential for multilevel resistive switching.

NANOMATERIALS (2021)

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Article Chemistry, Physical

Flexible Memory Device Composed of Metal-Oxide and Two-Dimensional Material (SnO2/WTe2) Exhibiting Stable Resistive Switching

Ghulam Dastgeer et al.

Summary: The study presents a flexible resistive-switching device composed of a bilayer tin-oxide/tungsten-ditelluride heterostructure, sandwiched between Ag/SnO2/WTe2/Au metal electrodes on a flexible PET substrate. The device exhibited highly stable resistive switching and excellent retention time, with improved endurance and reduced switching voltage compared to single tin-oxide stacked devices. These features suggest the potential for constructing a wearable memory device for data storage purposes.

MATERIALS (2021)

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Article Engineering, Electrical & Electronic

A hybrid III-V tunnel FET and MOSFET technology platform integrated on silicon

Clarissa Convertino et al.

Summary: The study presents a III-V hybrid TFET-MOSFET technology on silicon, achieving low-power and high-performance applications by optimizing InGaAs/GaAsSb TFETs and InGaAs MOSFETs simultaneously.

NATURE ELECTRONICS (2021)

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Article Chemistry, Physical

Discrete memristive levels and logic gate applications of Nb2O5 devices

Jamal Aziz et al.

Summary: Controlled resistive switching behavior has been found to have potential applications in brain-inspired functionalities and photonic sensors. By studying the bias-polarity dependent switching characteristics in W/Nb2O5/(Pt, ITO) sandwiched structures, multi-level cells and single-level cells with different switching states were observed. Additionally, the use of Nb2O5 films to implement Boolean logic functions may pave the way for commercialization of related logic circuits.

JOURNAL OF ALLOYS AND COMPOUNDS (2021)

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Article Nanoscience & Nanotechnology

Current Rectification, Resistive Switching, and Stable NDR Effect in BaTiO3/CeO2 Heterostructure Devices

Shania Rehman et al.

Summary: This study demonstrates the simultaneous manifestation of negative differential resistance, current rectification, and resistive switching characteristics in BaTiO3/CeO2 heterostructure. The negative differential resistance effect shows good stability at 300 K and may have potential applications in electronic devices. The presence of NDR is associated with trapping/detrapping of charge carriers at interface states formed at the BaTiO3/CeO2 interface.

ADVANCED ELECTRONIC MATERIALS (2021)

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Article Energy & Fuels

Optimization of ZnO:PEIE as an Electron Transport Layer for Flexible Organic Solar Cells

Kalyani D. Kadam et al.

Summary: This study successfully utilized ZnO:PEIE ETL to fabricate flexible organic solar cells, improving the performance of ZnO through PEIE doping, resulting in enhanced efficiency, stability, and mechanical properties of the devices.

ENERGY & FUELS (2021)

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Review Materials Science, Multidisciplinary

Inversion-type p-channel diamond MOSFET issues

Xufang Zhang et al.

Summary: This study successfully developed inversion-channel homoepitaxial and heteroepitaxial diamond MOSFETs, and proposed a new technique using H-diamond for OH-termination. Precise interface characterization of diamond MOS capacitors provided further insights into trap properties at the Al2O3/diamond interface, beneficial for enhancing MOSFET performance.

JOURNAL OF MATERIALS RESEARCH (2021)

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Article Computer Science, Information Systems

Abruptly-Switching MoS2-Channel Atomic-Threshold-Switching Field-Effect Transistor With AgTi/HfO2-Based Threshold Switching Device

Sojin Jeong et al.

Summary: By optimizing the Ag/HfO2-based TS device and inserting a Ti injection barrier layer, a stable and optimized performance for the 2D atomic-threshold-switching field-effect transistor (ATS-FET) was achieved.

IEEE ACCESS (2021)

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Review Chemistry, Multidisciplinary

Energy-efficient transistors: suppressing the subthreshold swing below the physical limit

Yongbiao Zhai et al.

Summary: Power consumption is a fundamental issue for micro-nano electronic circuits due to the miniaturization of electronic components. To address this, new transistor architectures have been designed to reduce subthreshold swing, lower the supply voltage, and decrease power consumption.

MATERIALS HORIZONS (2021)

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Article Engineering, Electrical & Electronic

Steep Switching Characteristics of L-Shaped Tunnel FET With Doping Engineering

Hyun Woo Kim et al.

Summary: The L-shaped tunnel FET introduced in this work, engineered with pocket doping, demonstrates improved performance by suppressing corner tunneling and enhancing on/off transition. Through optimized pocket doping concentration, the subthreshold swing is reduced and the on-current is significantly increased compared to conventional L-shaped TFETs, even in devices with extremely scaled gate length.

IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY (2021)

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Article Nanoscience & Nanotechnology

ZrOx Negative Capacitance Field-Effect Transistor with Sub-60 Subthreshold Swing Behavior

Siqing Zhang et al.

Summary: The ZrOx-based negative capacitance FETs show promising performance in a specific voltage range, indicating new opportunities in future applications. The ferroelectric-like behavior of Ge/ZrOx/TaN capacitors and the negative capacitance effects of amorphous HfO2 and ZrOx films devices confirm the potential applications of these devices.

NANOSCALE RESEARCH LETTERS (2021)

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Article Chemistry, Multidisciplinary

A New Opportunity for 2D van der Waals Heterostructures: Making Steep-Slope Transistors

Juan Lyu et al.

ADVANCED MATERIALS (2020)

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Article Chemistry, Multidisciplinary

Robust Impact-Ionization Field-Effect Transistor Based on Nanoscale Vertical Graphene/Black Phosphorus/Indium Selenide Heterostructures

Anyuan Gao et al.

ACS NANO (2020)

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Article Engineering, Electrical & Electronic

Theoretical Limit of Low Temperature Subthreshold Swing in Field-Effect Transistors

Arnout Beckers et al.

IEEE ELECTRON DEVICE LETTERS (2020)

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Article Nanoscience & Nanotechnology

HfO2/TiO2/HfO2 tri-layer high-K gate oxide based MoS2 negative capacitance FET with steep subthreshold swing

Md. Sherajul Islam et al.

AIP ADVANCES (2020)

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Article Chemistry, Physical

Ultralow switching voltage slope based on two-dimensional materials for integrated memory and neuromorphic applications

Linfeng Sun et al.

NANO ENERGY (2020)

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Article Nanoscience & Nanotechnology

WSe2/SnSe2 vdW heterojunction Tunnel FET with subthermionic characteristic and MOSFET co-integrated on same WSe2 flake

Nicolo Oliva et al.

NPJ 2D MATERIALS AND APPLICATIONS (2020)

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Article Chemistry, Physical

Effects of Charge Trapping at the MoS2-SiO2Interface on the Stability of Subthreshold Swing of MoS2Field Effect Transistors

Xinnan Huang et al.

MATERIALS (2020)

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Article Multidisciplinary Sciences

Atomic threshold-switching enabled MoS2 transistors towards ultralow-power electronics

Qilin Hua et al.

NATURE COMMUNICATIONS (2020)

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Article Nanoscience & Nanotechnology

Exploiting Within-Channel Tunneling in a Nanoscale Tunnel Field-Effect Transistor

Shelly Garg et al.

IEEE OPEN JOURNAL OF NANOTECHNOLOGY (2020)

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Article Chemistry, Multidisciplinary

Chemical Nature of Electrode and the Switching Response of RF-Sputtered NbOx Films

Jamal Aziz et al.

NANOMATERIALS (2020)

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Article Chemistry, Multidisciplinary

Van der Waals Multi-Heterostructures (PN, PIN, and NPN) for Dynamic Rectification in 2D Materials

Sikandar Aftab et al.

ADVANCED MATERIALS INTERFACES (2020)

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Article Nanoscience & Nanotechnology

Steep-slope field-effect transistors with AlGaN/GaN HEMT and oxide-based threshold switching device

Xuanqi Huang et al.

NANOTECHNOLOGY (2019)

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Article Chemistry, Multidisciplinary

In-Plane Anisotropic Properties of 1T′-MoS2 Layers

Gwang-Hyeon Nam et al.

ADVANCED MATERIALS (2019)

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Article Multidisciplinary Sciences

Parallel programming of an ionic floating-gate memory array for scalable neuromorphic computing

Elliot J. Fuller et al.

SCIENCE (2019)

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Article Materials Science, Multidisciplinary

Ultrathin electronic synapse having high temporal/spatial uniformity and an Al2O3/graphene quantum dots/Al2O3 sandwich structure for neuromorphic computing

Zhongwei Xu et al.

NPG ASIA MATERIALS (2019)

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Article Chemistry, Physical

Transparent and flexible photonic artificial synapse with piezo-phototronic modulator: Versatile memory capability and higher order learning algorithm

Mohit Kumar et al.

NANO ENERGY (2019)

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Article Chemistry, Multidisciplinary

Resonance Coupling in Heterostructures Composed of Silicon Nanosphere and Monolayer WS2: A Magnetic-Dipole-Mediated Energy Transfer Process

Hao Wang et al.

ACS NANO (2019)

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Article Chemistry, Multidisciplinary

Coherent Thermoelectric Power from Graphene Quantum Dots

Mali Zhao et al.

NANO LETTERS (2019)

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Article Nanoscience & Nanotechnology

Observation of ballistic avalanche phenomena in nanoscale vertical InSe/BP heterostructures

Anyuan Gao et al.

NATURE NANOTECHNOLOGY (2019)

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Article Materials Science, Multidisciplinary

Impact of Zirconium Doping on Steep Subthreshold Switching of Negative Capacitance Hafnium Oxide Based Transistors

Chun-Hu Cheng et al.

PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS (2019)

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Review Nanoscience & Nanotechnology

Recent Advances in Black Phosphorus-Based Electronic Devices

Wee Chong Tan et al.

ADVANCED ELECTRONIC MATERIALS (2019)

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Article Chemistry, Multidisciplinary

Ultrahigh Electrical Conductivity of Graphene Embedded in Metals

Mu Cao et al.

ADVANCED FUNCTIONAL MATERIALS (2019)

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Article Nanoscience & Nanotechnology

Steep-slope hysteresis-free negative capacitance MoS2 transistors

Mengwei Si et al.

NATURE NANOTECHNOLOGY (2018)

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Article Engineering, Electrical & Electronic

Sensitivity Challenge of Steep Transistors

Hesameddin Ilatikhameneh et al.

IEEE TRANSACTIONS ON ELECTRON DEVICES (2018)

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Article Engineering, Electrical & Electronic

A brief overview of gate oxide defect properties and their relation to MOSFET instabilities and device and circuit time-dependent variability

B. Kaczer et al.

MICROELECTRONICS RELIABILITY (2018)

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Article Nanoscience & Nanotechnology

Quantum engineering of transistors based on 2D materials heterostructures

Giuseppe Iannaccone et al.

NATURE NANOTECHNOLOGY (2018)

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Article Multidisciplinary Sciences

Dirac-source field-effect transistors as energy-efficient, high-performance electronic switches

Chenguang Qiu et al.

SCIENCE (2018)

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Article Chemistry, Multidisciplinary

Revealing the role of oxygen vacancies on the phase transition of VO2 film from the optical-constant measurements

Lele Fan et al.

RSC ADVANCES (2018)

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