Magnetism modulation in Co3Sn2S2 by current-assisted domain wall motion

The efficiency of spintronic devices can be improved by generating higher effective magnetic fields with lower working currents. Spin-transfer torques can drive magnetic domain wall motion in a device composed of a single material, but a high threshold current density is typically required to move the domain wall and improving the effective magnetic field in common itinerant ferromagnets is difficult. Here we report magnetism modulation in Co3Sn2S2-a magnetic Weyl semimetal-via spin-transfer-torque-driven domain wall motion. We examine the effect of d.c. current on magnetic reversal using anomalous Hall resistance measurements and domain wall motion using time-of-flight measurements. At 160 K, the threshold current density for driving domain wall motion is less than 5.1 x 10(5 )A cm(-2) at zero external field and less than 1.5 x 10(5 )A cm(-2) at a moderate external field (0.2 kOe). The spin-transfer-torque effective field can reach as high as 2.4-5.6 kOe MA(-1) cm(2) at 150 K.

Automated summary

The efficiency of spintronic devices can be improved by generating higher effective magnetic fields with lower working currents. Spin-transfer torques can drive magnetic domain wall motion in a device composed of a single material. Here, we report magnetism modulation in Co3Sn2S2-a magnetic Weyl semimetal-via spin-transfer-torque-driven domain wall motion. The threshold current density for driving domain wall motion is less than 5.1 x 10(5) A cm(-2) at zero external field and less than 1.5 x 10(5) A cm(-2) at a moderate external field (0.2 kOe). The spin-transfer-torque effective field can reach as high as 2.4-5.6 kOe MA(-1) cm(2) at 150 K.