Journal
MATERIALS TODAY COMMUNICATIONS
Volume 33, Issue -, Pages -Publisher
ELSEVIER
DOI: 10.1016/j.mtcomm.2022.104366
Keywords
Perovskite; Cs2ZrX6(X=Cl Br); High pressure; Band gap transition; First-principles calculations
Categories
Funding
- Fundamental Research Funds [K2022QN015]
- Zhongyuan University of Technology [34110736]
- Huanghe Science and Technology College [02032408]
- Key Research Projects of Jingchu University of Technology [HX202160, HX2022001]
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This study investigated the effect of pressure on Cs2ZrCl6 using first-principles calculations, finding that Cs2ZrCl6 is stable up to 75 GPa and that external pressure can alter the charge density distribution on the conduction bands, transforming it from an indirect band gap semiconductor to a direct band gap semiconductor. This research has implications for designing novel perovskites with superior performance.
Perovskites have piqued the interest of many people due to their exceptional properties and promising appli-cations. In this paper, the effect of pressure on lead-free double perovskites Cs2ZrCl6 is investigated using first -principles calculations. It demonstrates that Cs2ZrCl6 is stable up to 75 GPa, and that the alternation of the charge density distribution on the conduction bands caused by external pressure can force Cs2ZrCl6 to transform from an indirect band gap semiconductor to a direct band gap semiconductor, which is applicable for isostructural Cs2ZrBr6. This suggests that Cs2ZrCl6 and Cs2ZrBr6 have promising underlying applications in high-pressure environments. This work is also useful for designing novel perovskites with superior performance.
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