A perspective study on Au-nanoparticle adorned TiO2-nanowire for non-volatile memory devices

In this article, we synthesized Au-nanoparticle (NP) adorned TiO2-nanowire (NW) and TiO2-NW using glancing angle deposition technique (GLAD) for capacitive memory based application. To analyze memory performance of the device, capacitance (C) versus voltage (V) and conductance (G) versus voltage (V) characteristics were performed at various frequency up to 2 MHz. Consequently, we analyzed C-V hysteresis loop at different sweep voltages from +/- 2 V to +/- 10 V. The device Au-NP adorned TiO2-NW shows a large memory window (MW) of 12.65 volt at +/- 10 V and low interface trap density (D-it) of similar to 2.63 x 10(11) eV(-1) cm(-2) at 1 MHz operating frequency. The endurance and retention were calculated for both the samples. A higher endurance and stable retention were observed for Au-NP adorned TiO2-NW as compared to TiO2-NW. The results presented in this article established a strong presence of non-volatile memory based characteristics.

Automated summary

In this article, Au-nanoparticle adorned TiO2-nanowire devices were synthesized using glancing angle deposition technique. These devices showed a large memory window and low interface trap density, indicating their potential for capacitive memory based applications. Compared to TiO2-nanowire devices, the Au-nanoparticle adorned TiO2-nanowire devices demonstrated higher endurance and stable retention.