Enhanced Graphene Oxide Electrical Properties for Thin-Film Electronics Using an Active/Shrinkable Substrate

The advances in material science along with the development of fabrication techniques have enabled the realization of thin-film-based electronics on active substrates. This has substantially enhanced and supported the deployment of electronic devices in several emerging applications with flexible functionality. In this work, we report a novel fabrication of graphene oxide (GO)-based memristor devices on an active/shrinkable substrate. The standard lithography process is used to fabricate planar Au-rGO-Au devices on a polymer substrate that has the ability to shrink at a certain temperature (i.e., 170 degrees C). Upon heating, the devices are shrunk to 50% of their original size. A detailed electrical characterization has been carried out to study the switching behavior of the fabricated devices before and after shrinking. The results prove that upon shrinking, the device preserves its switching ability with enhanced electrical parameters (i.e., switching voltage). Also, material characterization performed for the deposited GO on the active substrate shows improved properties of the GO film due to the enhanced arrangement of GO flakes after shrinking. The novel approach proposed in this work provides new insights into and offers the ability to scale thin-film electronics postfabrication and thus overcome some of the device scaling challenges due to manufacturing limitations. It also unfolds a new path for the realization of GO-based electronic devices with improved electrical properties, which is a crucial aspect of the development of highly flexible and lightweight green electronics.

Automated summary

The study presents a novel fabrication method for graphene oxide (GO)-based memristor devices on an active/shrinkable substrate. The devices are fabricated using standard lithography process on a polymer substrate that can shrink at a certain temperature. The results demonstrate that the shrunk devices maintain their switching ability with improved electrical parameters, while the deposited GO film on the active substrate shows enhanced properties after shrinking. This novel approach offers insights into scaling thin-film electronics postfabrication and enables the realization of GO-based electronic devices with improved electrical properties.