Journal
ADVANCED MATERIALS
Volume 27, Issue 34, Pages 5043-+Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.201502239
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Funding
- Center for Advanced Soft-Electronics - Ministry of Science, ICT and Future Planning as Global Frontier Project, South Korea [2011-0031639, 2013M3A6A5073183]
- National Research Foundation of Korea [2013M3A6A5073183, 2011-0031639] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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Ultrathin and dense metal oxide gate dielectric layers are reported by a simple printing of AlOx and HfOx sol-gel precursors. Large-area printed indium gallium zinc oxide (IGZO) thin-film transistor arrays, which exhibit mobilities > 5 cm(2) V-1 s(-1) and gate leakage current of 10(-9) A cm(-2) at a very low operation voltage of 2 V, are demonstrated by continuous simple bar-coated processes.
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