High-speed uni-traveling-carrier photodiodes on silicon nitride

Article Optics

Ultra-fast germanium photodiode with 3-dB bandwidth of 265 GHz

S. Lischke et al.

Summary: By sandwiching a germanium fin between complementary in situ-doped silicon layers, a high-performance waveguide-coupled germanium photodiode is achieved, showing high internal responsivities and low dark currents at a wavelength of 1,550 nm. This novel device concept enables photodetectors with outstanding performance, with internal bandwidth-efficiency products reaching 86 GHz.

NATURE PHOTONICS (2021)

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Article Multidisciplinary Sciences

High-performance lasers for fully integrated silicon nitride photonics

Chao Xiang et al.

Summary: Achieving high output power and low noise integrated lasers using Si/SiN heterogeneous platform with Hertz-level linewidth has been demonstrated. This paves the way for fully integrating low-noise silicon nitride photonics in volume. The high-performance lasers on SiN with tens of milliwatts output power and sub-kHz fundamental linewidth address issues of mode transition loss, cavity design, and fabrication process, marking a milestone towards fully integrated low-noise silicon nitride photonics platform.

NATURE COMMUNICATIONS (2021)

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Review Multidisciplinary Sciences