☆ 4.6 Article

Photoluminescence Properties of InAs Quantum Dots Overgrown by a Low-Temperature GaAs Layer under Different Arsenic Pressures

ELECTRONICS (2022)

Related references

Note: Only part of the references are listed.

Review Physics, Multidisciplinary

Recent progresses of quantum confinement in graphene quantum dots

Si-Yu Li et al.

Summary: This article reviews the experimental progress on quantum confinement in graphene quantum dots (GQDs) through scanning tunneling microscopy (STM) and scanning tunneling spectroscopy (STS). Different types of GQDs, including Klein GQDs, bound-state GQDs, and edge-terminated GQDs, are investigated based on their confinement strength. The manipulation of novel properties in GQDs is achieved by tuning Berry phase and electron-electron (e-e) interaction. Moreover, high-spin magnetic ground states are introduced in edge-terminated GQDs by designing and synthesizing specific nanostructures.

FRONTIERS OF PHYSICS (2022)

Add to Collection

Article Physics, Applied

Impact of low-temperature cover layer growth of InAs/GaAs quantum dots on their optical properties

Shigekazu Okumura et al.

Summary: The optical and structural properties of InAs quantum dots are affected by the low-temperature InGaAs/GaAs cover layer growth. The photoluminescence intensity is highly dependent on the growth temperature and thickness of the low-temperature cover layer and decreases with the increase in the number of dislocations formed above the InAs quantum dots.

JAPANESE JOURNAL OF APPLIED PHYSICS (2022)

Add to Collection

Review Physics, Applied

Progress in quantum-dot single photon sources for quantum information technologies: A broad spectrum overview

Yasuhiko Arakawa et al.

APPLIED PHYSICS REVIEWS (2020)

Add to Collection

Article Engineering, Electrical & Electronic

Impact of Self-Heating and Elevated Temperature on Performance of Quantum Dot Microdisk Lasers

Alexey E. Zhukov et al.

IEEE JOURNAL OF QUANTUM ELECTRONICS (2020)

Add to Collection

Article Physics, Condensed Matter

Record Low Threshold Current Density in Quantum Dot Microdisk Laser

E. Moiseev et al.

SEMICONDUCTORS (2019)

Add to Collection

Article Chemistry, Physical

Size and shape tunability of self-assembled InAs/GaAs nanostructures through the capping rate

Antonio D. Utrilla et al.

APPLIED SURFACE SCIENCE (2018)

Add to Collection

Article Engineering, Electrical & Electronic

Development of Quantum Dot Lasers for Data-Com and Silicon Photonics Applications

Kenichi Nishi et al.

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS (2017)

Add to Collection

Article Materials Science, Multidisciplinary

Size dependence of the wavefunction of self-assembled InAs quantum dots from time-resolved optical measurements

Jeppe Johansen et al.

PHYSICAL REVIEW B (2008)

Add to Collection

Article Physics, Applied

Pinholelike defects in multistack 1.3 μm InAs quantum dot laser

Wei-Sheng Liu et al.

JOURNAL OF APPLIED PHYSICS (2006)

Add to Collection

Article Physics, Applied

Capping process of InAs/GaAs quantum dots studied by cross-sectional scanning tunneling microscopy

Q Gong et al.

APPLIED PHYSICS LETTERS (2004)

Add to Collection

Article Engineering, Electrical & Electronic

High performance quantum dot lasers on GaAs substrates operating in 1.5μm range

NN Ledentsov et al.

ELECTRONICS LETTERS (2003)

Add to Collection

Article Crystallography

Shape evolution of InAs quantum dots during overgrowth

R Songmuang et al.

JOURNAL OF CRYSTAL GROWTH (2003)

Add to Collection

Article Physics, Applied

Influence of a thin GaAs cap layer on structural and optical properties of InAs quantum dots

F Ferdos et al.

APPLIED PHYSICS LETTERS (2002)

Add to Collection

Article Engineering, Electrical & Electronic

Low-threshold current density 1.3-μm InAs quantum-dot lasers with the dots-in-a-well (DWELL) structure

A Stintz et al.

IEEE PHOTONICS TECHNOLOGY LETTERS (2000)

Add to Collection

© Peeref 2019-2024. All rights reserved.