Journal
ADVANCED MATERIALS
Volume 27, Issue 37, Pages 5599-5604Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.201502719
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Funding
- National Science Foundation for Distinguished Young Scholars of China [61425020]
- National Natural Science Foundation of China [11174300, 11474293]
- Zhejiang Provincial Natural Science Fund [LR13F040001]
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Freestanding synaptic transistors are fabricated on solution-processed chitosan membranes. A short-term memory to long-term memory transition is observed due to proton-related electrochemical doping under repeated pulse stimulus. Moreover, freestanding artificial synaptic devices with multiple presynaptic inputs are investigated, and spiking logic operation and logic modulation are realized.
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