4.6 Article

Nanoscale ITO Films for Plasmon Resonance-Based Optical Sensors

Journal

COATINGS
Volume 12, Issue 12, Pages -

Publisher

MDPI
DOI: 10.3390/coatings12121868

Keywords

ITO; surface plasmon resonance (SPR); surface electromagnetic wave; SPR sensor

Funding

  1. Ministry of Science and Higher Education of the Russian Federation
  2. Russian Science Foundation
  3. [075-03-2020-237/1]
  4. [FEWM-2020-0040]
  5. [21-72-00124]

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The development of plasmonics has led to the possibility of high-speed and highly sensitive optical sensors for analyzing chemical and biological media. In this study, the researchers demonstrate that the use of indium tin oxide (ITO) films with a high concentration of charge carriers can shift the surface plasmon resonance into the visible radiation region. The results show that SPR can be excited in ITO films with a concentration of free charge carriers, and the excitation wavelength of SPR can be changed by adding various analytes.
The developing field of plasmonics has led to the possibility of creating a new type of high-speed, highly sensitive optical sensors for the analysis of chemical and biological media. The functional conducting layers of surface plasmon resonance (SPR) optical sensors are almost always nanoscale thin films of noble metals. To enhance the plasmon resonance, nanostructured films of transparent conductive oxides are introduced into the optical sensors. However, such modified optical sensors operate in the infrared region of the spectrum. In this work, we demonstrate that the use of indium tin oxide (ITO) films with a high concentration of charge carriers makes it possible to shift the surface plasmon resonance into the visible radiation region. The work presents the results of the development of magnetron deposition technology for ITO thin films, with optimal parameters for optical sensors based on surface plasmon resonance operating in the visible range of the spectrum. Their optical and electrical characteristics are investigated. Excitation of the surface and volume plasmon resonance at the dielectric-ITO film interface, using the Kretschman configuration, is studied. It is shown that SPR is excited in the investigated ITO films with a concentration of free charge carriers of the order of 10(21)-10(22) cm(-3), when irradiated with a beam of light with TM polarization in the wavelength range of 350-950 nm. At the same time, the addition of various analytes to the surface of an ITO film changes the excitation wavelength of the SPR.

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