Related references
Note: Only part of the references are listed.2.41 kV Vertical P-Nion-Ga2O3 Heterojunction Diodes With a Record Baligas Figure-of-Merit of 5.18 GWcm2
Yuangang Wang et al.
IEEE TRANSACTIONS ON POWER ELECTRONICS (2022)
Ultra-wide bandgap semiconductor Ga2O3 power diodes
Jincheng Zhang et al.
NATURE COMMUNICATIONS (2022)
2.6 kV NiO/Ga2O3 Heterojunction Diode with Superior High-Temperature Voltage Blocking Capability
Weibing Hao et al.
2022 IEEE 34TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS (ISPSD) (2022)
Normally-off β-Ga2O3 Power Heterojunction Field-Effect-Transistor Realized by p-NiO and Recessed-Gate
Xuanze Zhou et al.
2022 IEEE 34TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS (ISPSD) (2022)
Deep-level defects in gallium oxide
Zhengpeng Wang et al.
JOURNAL OF PHYSICS D-APPLIED PHYSICS (2021)
1.37 kV/12 A NiO/beta-Ga2O3 Heterojunction Diode With Nanosecond Reverse Recovery and Rugged Surge-Current Capability
Hehe Gong et al.
IEEE TRANSACTIONS ON POWER ELECTRONICS (2021)
β-Ga2O3 vertical heterojunction barrier Schottky diodes terminated with p-NiO field limiting rings
H. H. Gong et al.
APPLIED PHYSICS LETTERS (2021)
Forward and reverse current transport mechanisms in tungsten carbide Schottky contacts on AlGaN/GaN heterostructures
G. Greco et al.
JOURNAL OF APPLIED PHYSICS (2021)
Ti- and Fe-related charge transition levels in β-Ga2O3
Christian Zimmermann et al.
APPLIED PHYSICS LETTERS (2020)
Recent progress on the electronic structure, defect, and doping properties of Ga2O3
Jiaye Zhang et al.
APL MATERIALS (2020)
A 1.86-kV double-layered NiO/β-Ga2O3 vertical p-n heterojunction diode
H. H. Gong et al.
APPLIED PHYSICS LETTERS (2020)
Band Alignment and Interface Recombination in NiO/β-Ga2O3 Type-II p-n Heterojunctions
Hehe Gong et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2020)
Carrier capture kinetics, deep levels, and isolation properties of β-Ga2O3 Schottky-barrier diodes damaged by nitrogen implantation
C. De Santi et al.
APPLIED PHYSICS LETTERS (2020)
Carrier Transport and Gain Mechanisms in β-Ga2O3-Based Metal-Semiconductor-Metal Solar-Blind Schottky Photodetectors
Yang Xu et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2019)
Identification of critical buffer traps in Si δ-doped β-Ga2O3 MESFETs
Joe F. McGlone et al.
APPLIED PHYSICS LETTERS (2019)
Effect of 1.5 MeV electron irradiation on β-Ga2O3 carrier lifetime and diffusion length
Jonathan Lee et al.
APPLIED PHYSICS LETTERS (2018)
Iron and intrinsic deep level states in Ga2O3
M. E. Ingebrigtsen et al.
APPLIED PHYSICS LETTERS (2018)
Trapping Effects in Si δ-Doped β-Ga2O3 MESFETs on an Fe-Doped β-Ga2O3 Substrate
Joe F. McGlone et al.
IEEE ELECTRON DEVICE LETTERS (2018)
Diffusion length of non-equilibrium minority charge carriers in β-Ga2O3 measured by electron beam induced current
E. B. Yakimov et al.
JOURNAL OF APPLIED PHYSICS (2018)
Deep level defects in Ge-doped (010) beta-Ga2O3 layers grown by plasma-assisted molecular beam epitaxy
Esmat Farzana et al.
JOURNAL OF APPLIED PHYSICS (2018)
A review of Ga2O3 materials, processing, and devices
S. J. Pearton et al.
APPLIED PHYSICS REVIEWS (2018)
Hole traps and persistent photocapacitance in proton irradiated β-Ga2O3 films doped with Si
A. Y. Polyakov et al.
APL MATERIALS (2018)
Gain mechanism and carrier transport in high responsivity AlGaN-based solar blind metal semiconductor metal photodetectors
Shashwat Rathkanthiwar et al.
JOURNAL OF APPLIED PHYSICS (2017)
Heterojunction p-Cu2O/n-Ga2O3 diode with high breakdown voltage
Tatsuro Watahiki et al.
APPLIED PHYSICS LETTERS (2017)
Electronic Structure and Band Alignment at the NiO and SrTiO3 p-n Heterojunctions
Kelvin H. L. Zhang et al.
ACS APPLIED MATERIALS & INTERFACES (2017)
All-oxide p-n heterojunction diodes comprising p-type NiO and n-type β-Ga2O3
Yoshihiro Kokubun et al.
APPLIED PHYSICS EXPRESS (2016)
Deep level defects throughout the bandgap of (010) β-Ga2O3 detected by optically and thermally stimulated defect spectroscopy
Z. Zhang et al.
APPLIED PHYSICS LETTERS (2016)
Intrinsic electron mobility limits in β-Ga2O3
Nan Ma et al.
APPLIED PHYSICS LETTERS (2016)
Oxide bipolar electronics: materials, devices and circuits
Marius Grundmann et al.
JOURNAL OF PHYSICS D-APPLIED PHYSICS (2016)
Near unity ideality factor and Shockley-Read-Hall lifetime in GaN-on-GaN p-n diodes with avalanche breakdown
Zongyang Hu et al.
APPLIED PHYSICS LETTERS (2015)
Carrier transport in reverse-biased graphene/semiconductor Schottky junctions
D. Tomer et al.
APPLIED PHYSICS LETTERS (2015)
A quantitative model for charge carrier transport, trapping and recombination in nanocrystal-based solar cells
Deniz Bozyigit et al.
NATURE COMMUNICATIONS (2015)
Semiclassical simulation of trap-assisted tunneling in GaN-based light-emitting diodes
Marco Mandurrino et al.
JOURNAL OF COMPUTATIONAL ELECTRONICS (2015)
Interface Recombination Current in Type II Heterostructure Bipolar Diodes
Marius Grundmann et al.
ACS APPLIED MATERIALS & INTERFACES (2014)
Trap-assisted tunneling in InGaN/GaN single-quantum-well light-emitting diodes
M. Auf Der Maur et al.
APPLIED PHYSICS LETTERS (2014)
Transparent p-CuI/n-ZnO heterojunction diodes
Friedrich-Leonhard Schein et al.
APPLIED PHYSICS LETTERS (2013)
On the Origin of Kink Effect in Current-Voltage Characteristics of AlGaN/GaN High Electron Mobility Transistors
Janesh K. Kaushik et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2013)
Investigation of Driving Forces for Charge Extraction in Organic Solar Cells: Transient Photocurrent Measurements on Solar Cells Showing S-Shaped Current-Voltage Characteristics
Wolfgang Tress et al.
ADVANCED ENERGY MATERIALS (2013)
Analysis of leakage current mechanisms in Pt/Au Schottky contact on Ga-polarity GaN by Frenkel-Poole emission and deep level studies
Peta Koteswara Rao et al.
JOURNAL OF APPLIED PHYSICS (2011)
Distinguishing bulk traps and interface states in deep-level transient spectroscopy
A. V. P. Coelho et al.
JOURNAL OF PHYSICS D-APPLIED PHYSICS (2011)
Forward tunneling current in GaN-based blue light-emitting diodes
Dawei Yan et al.
APPLIED PHYSICS LETTERS (2010)
The origin of the high diode-ideality factors in GaInN/GaN multiple quantum well light-emitting diodes
Di Zhu et al.
APPLIED PHYSICS LETTERS (2009)
Lattice dynamical, dielectric, and thermodynamic properties of β-Ga2O3 from first principles
Bo Liu Mu Gu et al.
APPLIED PHYSICS LETTERS (2007)
Optical properties of gallium oxide thin films
M Rebien et al.
APPLIED PHYSICS LETTERS (2002)