Investigation on n-Type (-201) β-Ga2O3 Ohmic Contact via Si Ion Implantation

Heavy doped n-type beta-Ga2O3 (HD-Ga2O3) was obtained by employing Si ion implantation technology on unintentionally doped beta-Ga2O3 single crystal substrates. To repair the Ga2O3 lattice damage and activate the Si after implantation, the implanted substrates were annealed at 950 degrees C, 1000 degrees C, and 1100 degrees C, respectively. High-resolution X-ray diffraction and high-resolution transmission electron microscopy show that the ion-implanted layer has high lattice quality after high-temperature annealing at 1000 degrees C. The minimum specific contact resistance is 9:2 x 10(-5) Omega center dot cm(2), which is attributed to the titanium oxide that is formed at the Ti/Ga2O3 interface via rapid thermal annealing at 480 degrees C. Based on these results, the lateral beta-Ga2O3 diodes were prepared, and the diodes exhibit high forward current density and low specific on-resistance.

Automated summary

Heavy doped n-type beta-Ga2O3 (HD-Ga2O3) was obtained by Si ion implantation on unintentionally doped beta-Ga2O3 single crystal substrates. The ion-implanted layer showed high lattice quality after high-temperature annealing, and the minimum specific contact resistance was reduced by the formation of titanium oxide at the Ti/Ga2O3 interface. Lateral beta-Ga2O3 diodes prepared using HD-Ga2O3 exhibited high forward current density and low specific on-resistance.