Journal
ADVANCED MATERIALS
Volume 28, Issue 8, Pages 1559-1566Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.201504754
Keywords
haptic memory devices; resistive switching memory; sensory memory; tactile sensing
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Funding
- National Research Foundation
- Prime Minister's Office, Singapore, under its Competitive Research Programme Funding Scheme [NRF-CRP13-2014-02]
- NTU-A*STAR Silicon Technologies Centre of Excellence [11235100003]
- National Natural Science Foundation of China (NSFC) [21428304]
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Skin-inspired haptic-memory devices, which can retain pressure information after the removel of external pressure by virtue of the nonvolatile nature of the memory devices, are achieved. The rise of haptic-memory devices will allow for mimicry of human sensory memory, opening new avenues for the design of next-generation high-performance sensing devices and systems.
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