Morphology Transition of Te-Doped InAs Nanowire on InP(111)B Grown Using MOCVD Method

In this paper, we reported changes in the growth morphology of n+InAs nanowires (NWs) doped with Te which were selectively grown on nano-hole patterned InP(111)B substrates using an MOCVD method. While the vertical growth of InAs NWs in the direction was extremely suppressed, their lateral growth was enhanced when the diethyl-tellurium (DETe) flow rate was increased as they grew. Moreover, the sidewall planes evolved from (11 over bar 0) (90 & DEG; against the (111) plane) to a reverse-tapered morphology, which had a 62 & DEG; slope against the InP (111)B plane, when the Te flow rate and growth time were increased. This indicates that the surfactant effect of adsorbed Te atoms on InAs changes the relative growth rate between (111) and (11 over bar 0) due to the increase in surface free energy in the growth plane.

Automated summary

This paper investigates the growth morphology changes of Te-doped InAs nanowires grown on InP substrates, showing that increased Te flow rate suppresses vertical growth while enhancing lateral growth, and leads to the evolution of sidewall planes from (11 over bar 0) to a reverse-tapered morphology.