Related references
Note: Only part of the references are listed.Effect of a SiC seed layer grown at different temperatures on SiC film deposition on top of an AlN/Si(110) substrate
Yuki Nara et al.
JAPANESE JOURNAL OF APPLIED PHYSICS (2019)
Growth of 3C-SiC(111) on AlN/off-axis Si(110) hetero-structure and formation of epitaxial graphene thereon
Syunki Narita et al.
JAPANESE JOURNAL OF APPLIED PHYSICS (2019)
Al5+αSi5+δN12, a new Nitride compound
R. Dagher et al.
SCIENTIFIC REPORTS (2019)
Preparation of high-quality AlN on sapphire by high-temperature face-to-face annealing
Hideto Miyake et al.
JOURNAL OF CRYSTAL GROWTH (2016)
Epitaxial challenges of GaN on silicon
F. Semond
MRS BULLETIN (2015)
3C-SiC Heteroepitaxial Growth on Silicon: The Quest for Holy Grail
Gabriel Ferro
CRITICAL REVIEWS IN SOLID STATE AND MATERIALS SCIENCES (2015)
Graphene growth on AlN templates on silicon using propane-hydrogen chemical vapor deposition
A. Michon et al.
APPLIED PHYSICS LETTERS (2014)
Electrothermally driven high-frequency piezoresistive SiC cantilevers for dynamic atomic force microscopy
R. Boubekri et al.
JOURNAL OF APPLIED PHYSICS (2014)
Epitaxial graphene formation on 3C-SiC/Si thin films
Maki Suemitsu et al.
JOURNAL OF PHYSICS D-APPLIED PHYSICS (2014)
CVD growth of SiC on sapphire substrate and graphene formation from the epitaxial SiC
Jeonghyun Hwang et al.
JOURNAL OF CRYSTAL GROWTH (2013)
Growth of AlN/SiC/AlN quantum wells on Si(111) by molecular beam epitaxy
Yana Cheng et al.
APPLIED PHYSICS LETTERS (2012)
Epitaxial Graphene Growth on 3C-SiC(111)/AlN(0001)/Si(100)
Benjamin Hsia et al.
ELECTROCHEMICAL AND SOLID STATE LETTERS (2011)
Evidence of electrical activity of extended defects in 3C-SiC grown on Si
X. Song et al.
APPLIED PHYSICS LETTERS (2010)
Growth of GaN based structures on Si(110) by molecular beam epitaxy
Y. Cordier et al.
JOURNAL OF CRYSTAL GROWTH (2010)
Epitaxial graphene on silicon substrates
M. Suemitsu et al.
JOURNAL OF PHYSICS D-APPLIED PHYSICS (2010)
Comparative study of the role of the nucleation stage on the final crystalline quality of (111) and (100) silicon carbide films deposited on silicon substrates.
M. Portail et al.
JOURNAL OF APPLIED PHYSICS (2009)
Elaboration of (111) oriented 3C-SiC/Si layers for template application in nitride epitaxy
M. Zielinski et al.
MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS (2009)
Epitaxy of GaN on silicon-impact of symmetry and surface reconstruction
A. Dadgar et al.
NEW JOURNAL OF PHYSICS (2007)
Effect of growth parameters on the heteroepitaxy of 3C-SiC on 6H-SiC substrate by chemical vapor deposition
M Soueidan et al.
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY (2006)
DPBs-free and polytype controlled growth of SiC via surface etching on on-axis 6H-SiC(0001)
ZY Xie et al.
JOURNAL OF CRYSTAL GROWTH (2001)
Vibrational properties of AlN grown on (111)-oriented silicon
T Prokofyeva et al.
PHYSICAL REVIEW B (2001)
Stacking fault energy of 6H-SiC and 4H-SiC single crystals
MH Hong et al.
PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES (2000)
Share Paper
