Temperature-Dependent Dynamic on Resistance in Gamma-Irradiated AlGaN/GaN Power HEMTs

Dynamic R-ON is a key parameter in terms of device reliability and the efficiency of power-switching converters. In this study, commercial off-the-shelf GaN-on-Si power high-electron-mobility transistors (HEMTs) were irradiated using different regimes of accumulative gamma rays with a Co-60 source of photon energy (1.33 MeV), while a base temperature of 53 degrees C and 133 degrees C during the irradiation test was applied. This test campaign had the objective of investigating how the combination of gamma irradiation and temperature affects dynamic on-resistance (R-ON) behaviour. The results indicated that gate voltage bias stress affected the degradation of dynamic on-resistance when irradiation was applied, and that temperature was an accelerating factor in dynamic on-resistance degradation. Finally, we obtained a partial reduction in dynamic R-ON when a total ionising dose of around 140 krad(SiO2) was applied and the base temperature during the irradiation test was not high.

Automated summary

This study investigates the effect of gamma irradiation and temperature on the dynamic on-resistance (R-ON) behavior of commercial GaN-on-Si power HEMTs. The results show that gate voltage bias stress contributes to the degradation of dynamic R-ON during irradiation, and temperature accelerates this degradation. Additionally, a partial reduction in dynamic R-ON is observed when the total ionizing dose is around 140 krad(SiO2) and the base temperature during irradiation is not high.