Few-Layer Graphene as an Efficient Buffer for GaN/AlN Epitaxy on a SiO2/Si Substrate: A Joint Experimental and Theoretical Study

Single-layer (SLG)/few-layer (FLG) and multilayer graphene (MLG) (>15 layers) samples were obtained using the CVD method on high-textured Cu foil catalysts. In turn, plasma-assisted molecular beam epitaxy was applied to carry out the GaN graphene-assisted growth. A thin AlN layer was used at the initial stage to promote the nucleation process. The effect of graphene defectiveness and thickness on the quality of the GaN epilayers was studied. The bilayer graphene showed the lowest strain and provided optimal conditions for the growth of GaN/AlN. Theoretical studies based on the density functional theory have shown that the energy of interaction between graphene and AlN is almost the same as between graphite sheets (194 mJ/m(2)). However, the presence of vacancies and other defects as well as compression-induced ripples and nitrogen doping leads to a significant change in this energy.

Automated summary

In this study, SLG/FLG and MLG samples were obtained using the CVD method, and plasma-assisted molecular beam epitaxy was used for GaN graphene-assisted growth. The effect of graphene defectiveness and thickness on the quality of the GaN epilayers was investigated. The results showed that bilayer graphene provided optimal conditions for the growth of GaN/AlN.