External-Field-Robust Stochastic Magnetic Tunnel Junctions Using a Free Layer with Synthetic Antiferromagnetic Coupling

The stochastic magnetic tunnel junction (MTJ), the resistance of which fluctuates in time between low and high states under thermal fluctuation, is expected to serve as a key element in probabilistic computers. For reliable operation and versatile application, one needs to address the challenge that the relaxation time in each state should be virtually independent of external magnetic fields in the range of, for example, several mT. In this research, we fabricate in-plane easy-axis elliptical stochastic MTJs with a synthetic antiferromagnetic (SAF) free layer and examine the robustness of their properties against external fields while comparing them with stochastic MTJs with a conventional single ferromagnetic structure. We show that the MTJ with a SAF free layer shows more robust relaxation times against fields applied along the easy- and hard-axis directions. The results are reproduced with a macrospin simulation, from which design guidelines for robust stochastic MTJs targeting probabilistic computers are discussed.

Automated summary

By fabricating stochastic magnetic tunnel junctions with synthetic antiferromagnetic free layers, this research demonstrates their robust relaxation times against external magnetic fields, providing design guidelines for stochastic MTJs targeting probabilistic computers.