Related references
Note: Only part of the references are listed.Strongly reduced V pit density on InGaNOS substrate by using InGaN/GaN superlattice
A. Dussaigne et al.
JOURNAL OF CRYSTAL GROWTH (2020)
Variable-Wavelength Quick Scanning Nanofocused X-Ray Microscopy for In Situ Strain and Tilt Mapping
Marie-Ingrid Richard et al.
SMALL (2020)
Full InGaN red light emitting diodes
A. Dussaigne et al.
JOURNAL OF APPLIED PHYSICS (2020)
Demonstration of ultra-small (0.2%) for mini-displays
Shubhra S. Pasayat et al.
Applied Physics Express (2020)
Correlation of Optical, Structural, and Compositional Properties with V-Pit Distribution in InGaN/GaN Multiquantum Wells
Marvin Hartwig Zoellner et al.
ACS APPLIED MATERIALS & INTERFACES (2019)
Combining Nanofocused X-Rays with Electrical Measurements at the NanoMAX Beamline
Lert Chayanun et al.
CRYSTALS (2019)
Optical absorption edge broadening in thick InGaN layers: Random alloy atomic disorder and growth mode induced fluctuations
Raphael Butte et al.
APPLIED PHYSICS LETTERS (2018)
X-ray nanobeam diffraction imaging of materials
Tobias U. Schulli et al.
CURRENT OPINION IN SOLID STATE & MATERIALS SCIENCE (2018)
3D lattice distortions and defect structures in ion-implanted nano-crystals
Felix Hofmann et al.
SCIENTIFIC REPORTS (2017)
Enhanced In incorporation in full InGaN heterostructure grown on relaxed InGaN pseudo-substrate
A. Even et al.
APPLIED PHYSICS LETTERS (2017)
Cross-correlation based high resolution electron backscatter diffraction and electron channelling contrast imaging for strain mapping and dislocation distributions in InAlN thin films
A. Vilalta-Clemente et al.
ACTA MATERIALIA (2017)
Accurate strain measurements in highly strained Ge microbridges
A. Gassenq et al.
APPLIED PHYSICS LETTERS (2016)
Lattice strain and tilt mapping in stressed Ge microstructures using X-ray Laue micro-diffraction and rainbow filtering
Samuel Tardif et al.
JOURNAL OF APPLIED CRYSTALLOGRAPHY (2016)
Imaging Structure and Composition Homogeneity of 300 mm SiGe Virtual Substrates for Advanced CMOS Applications by Scanning X-ray Diffraction Microscopy
Marvin H. Zoellner et al.
ACS APPLIED MATERIALS & INTERFACES (2015)
Separating strain from composition in unit cell parameter maps obtained from aberration corrected high resolution transmission electron microscopy imaging
T. Schulz et al.
JOURNAL OF APPLIED PHYSICS (2014)
Strain distributions and diffraction peak profiles from crystals with dislocations
Vladimir M. Kaganer et al.
ACTA CRYSTALLOGRAPHICA A-FOUNDATION AND ADVANCES (2014)
A tunable multicolour 'rainbow' filter for improved stress and dislocation density field mapping in polycrystals using X-ray Laue microdiffraction
Odile Robach et al.
ACTA CRYSTALLOGRAPHICA A-FOUNDATION AND ADVANCES (2013)
Strain analysis in SiN/Ge microstructures obtained via Si-complementary metal oxide semiconductor compatible approach
G. Capellini et al.
JOURNAL OF APPLIED PHYSICS (2013)
Gallium nitride devices for power electronic applications
B. Jayant Baliga
SEMICONDUCTOR SCIENCE AND TECHNOLOGY (2013)
X-ray diffraction peaks from correlated dislocations: Monte Carlo study of dislocation screening
Vladimir M. Kaganer et al.
ACTA CRYSTALLOGRAPHICA SECTION A (2010)
White light emitting diodes with super-high luminous efficacy
Yukio Narukawa et al.
JOURNAL OF PHYSICS D-APPLIED PHYSICS (2010)
Determination of elastic strain fields and geometrically necessary dislocation distributions near nanoindents using electron back scatter diffraction
Angus J. Wilkinson et al.
PHILOSOPHICAL MAGAZINE (2010)
When group-III nitrides go infrared: New properties and perspectives
Junqiao Wu
JOURNAL OF APPLIED PHYSICS (2009)
X-ray diffraction of III-nitrides
M. A. Moram et al.
REPORTS ON PROGRESS IN PHYSICS (2009)
Photon-counting X-ray imaging at kilohertz frame rates
Cyril Ponchut et al.
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT (2007)
Three-dimensional mapping of a deformation field inside a nanocrystal
Mark A. Pfeifer et al.
NATURE (2006)
X-ray diffraction peak profiles from threading dislocations in GaN epitaxial films
VM Kaganer et al.
PHYSICAL REVIEW B (2005)
Transfers of 2-inch GaN films onto sapphire substrates using Smart Cut™ technology
A Tauzin et al.
ELECTRONICS LETTERS (2005)