Journal
NANOMATERIALS
Volume 12, Issue 22, Pages -Publisher
MDPI
DOI: 10.3390/nano12224021
Keywords
InGaZnO; self-aligned top-gate; thin-film transistors
Categories
Funding
- National Natural Science Foundation of China [62174105]
- Shanghai Education Development Foundation
- Shanghai Municipal Education Commission [18SG38]
- Program of Shanghai Academic/Technology Research Leader [18XD1424400]
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This paper proposes a facile modifying technique for self-aligned top-gate In-Ga-Zn-O (IGZO) thin-film transistors (TFTs) by controlling the process parameter of the passivation layer at relatively low temperatures. The modified IGZO TFTs show stable electrical performance.
In this paper, a facile modifying technique of source/drain regions conductivity was proposed for self-aligned top-gate In-Ga-Zn-O (IGZO) thin-film transistors (TFTs) by controlling the process parameter of the passivation layer at relatively low temperatures. The sheet resistance of the source and drain regions of IGZO was approximately 365 omega/, and there was no significant change within a month. The device parameters of mobility, threshold voltage, subthreshold swing, and current switching ratio of the fabricated device were 15.15 cm(2)V(-1)s(-1), 0.09 V, 0.15 V/dec, and higher than 10(9), respectively. The threshold voltage drift under negative bias illumination stress was -0.34 V. In addition, a lower channel width-normalized contact resistance of 9.86 omega center dot cm was obtained.
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