Modeling of Optimized Lattice Mismatch by Carbon-Dioxide Laser Annealing on (In, Ga) Co-Doped ZnO Multi-Deposition Thin Films Introducing Designed Bottom Layers

In this study, modeling of optimized lattice mismatch by carbon-dioxide annealing on (In, Ga) co-doped ZnO multi-deposition thin films was investigated with crystallography and optical analysis. (In, Ga) co-doped ZnO multi-deposition thin films with various types of bottom layers were fabricated on sapphire substrates by solution synthesis, the spin coating process, and carbon-dioxide laser irradiation with post annealing. (In, Ga) co-doped ZnO multi-deposition thin films with Ga-doped ZnO as the bottom layer showed the lowest mismatch ratio between the substrate and the bottom layer of the film. The carbon-dioxide laser annealing process can improve electrical properties by reducing lattice mismatch. After applying the carbon-dioxide laser annealing process to the (In, Ga) co-doped ZnO multi-deposition thin films with Ga-doped ZnO as the bottom layer, an optimized sheet resistance of 34.5 k omega/sq and a high transparency rate of nearly 90% in the visible light wavelength region were obtained.

Automated summary

This study investigated the modeling of optimized lattice mismatch in (In, Ga) co-doped ZnO multi-deposition thin films using carbon-dioxide annealing and analyzed its crystallographic and optical properties. The films were fabricated on sapphire substrates with various types of bottom layers using solution synthesis, spin coating, and carbon-dioxide laser annealing. The (In, Ga) co-doped ZnO films with Ga-doped ZnO as the bottom layer showed the lowest mismatch ratio between the substrate and the film. The carbon-dioxide laser annealing process improved the electrical properties of the films by reducing lattice mismatch, resulting in an optimized sheet resistance of 34.5 k ohm/sq and high transparency of nearly 90% in the visible light wavelength region.