Journal
INTERNATIONAL JOURNAL OF PRECISION ENGINEERING AND MANUFACTURING-GREEN TECHNOLOGY
Volume -, Issue -, Pages -Publisher
KOREAN SOC PRECISION ENG
DOI: 10.1007/s40684-022-00496-y
Keywords
Silver nanowire; Transparent electrode; Surface roughness; Flexibility; Thin-film transistor
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In this work, the silver nanowires (AgNWs) were welded and embedded into polyethylene terephthalate substrate under room temperature and ambient conditions by an intense pulsed light (IPL) irradiation with applying mechanical roll-pressing simultaneously. The AgNW flexible transparent conductive electrodes (FTCEs) by IPL with the simultaneous mechanical roll-pressing showed significant improvements in electrical conductivity, optical properties, and surface roughness compared to the unwelded AgNW FTCEs.
In this work, the silver nanowires (AgNWs) were welded and embedded into polyethylene terephthalate substrate under room temperature and ambient conditions by an intense pulsed light (IPL) irradiation with applying mechanical roll-pressing simultaneously. To obtain high electrical conductivity and low surface roughness, the IPL irradiation conditions (pulse number, irradiation energy, pulse on-time, and pulse off-time) and roll-pressing conditions (maximum contact pressure, rolling counts) were optimized. The AgNW flexible transparent conductive electrodes (FTCEs) by IPL with the simultaneous mechanical roll-pressing showed noteworthy enhanced electrical property (Sheet resistance: 20.8 omega/sq), optical properties (transmittance: 97.25%, haze: 1.56% at 550 nm wavelength), and smooth surface (surface roughness: 6.267 nm); the sheet resistance decreased about 60% and transmittance increased about 1%, and surface roughness decreased about 47% compared to the unwelded AgNW FTCEs. With the optimal IPL welding process with mechanical roll-pressing, the excellent stability of AgNW FTCEs could be obtained under various reliability tests such as tape peeling test, ultra-sonication test, and bending test (50,000 cycles) with a bending radius (1 mm). It was also successfully used to fabricate thin-film transistor as bottom gate and heating films showing excellent performances. [GRAPHICS]
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