Current-induced perpendicular effective magnetic field in magnetic heterostructures

The generation of perpendicular effective magnetic field or perpendicular spins (sigma(z)) is central for the development of energy-efficient, scalable, and external-magnetic-field-free spintronic memory and computing technologies. Here, we report the first identification and the profound impacts of a significant effective perpendicular magnetic field that can arise from asymmetric current spreading within magnetic microstrips and Hall bars. This effective perpendicular magnetic field can exhibit all the three characteristics that have been widely assumed in the literature to signify the presence of a flow of sigma(z), i.e., external-magnetic-field-free current switching of uniform perpendicular magnetization, a sin2 phi-dependent contribution in spin-torque ferromagnetic resonance signal of in-plane magnetization (phi is the angle of the external magnetic field with respect to the current), and a phi-independent but field-dependent contribution in the second harmonic Hall voltage of in-plane magnetization. This finding suggests that it is critical to include current spreading effects in the analyses of various spin polarizations and spin-orbit torques in the magnetic heterostructure. Technologically, our results provide a perpendicular effective magnetic field induced by asymmetric current spreading as a novel, universally accessible mechanism for efficient, scalable, and external-magnetic-field-free magnetization switching in memory and computing technologies.

Automated summary

In this study, we report the discovery and profound impacts of a significant effective perpendicular magnetic field that can arise from asymmetric current spreading within magnetic microstrips and Hall bars. This finding challenges the widely assumed characteristics of an external-magnetic-field-free flow of sigma(z), and highlights the importance of considering current spreading effects in the analysis of spin polarizations and spin-orbit torques in magnetic heterostructures. Technologically, our results provide a novel and universally accessible mechanism for efficient, scalable, and external-magnetic-field-free magnetization switching in memory and computing technologies.