Monolithic 45 Degree Deflecting Mirror as a Key Element for Realization of 2D Arrays of Laser Diodes Based on AlInGaN Semiconductors

In this study, we propose a solution for realization of surface emitting, 2D array of visible light laser diodes based on AlInGaN semiconductors. The presented system consists of a horizontal cavity lasing section adjoined with beam deflecting section in the form of 45 degrees inclined planes. They are placed in the close vicinity of etched vertical cavity mirrors that are fabricated by Reactive Ion Beam Etching. The principle of operation of this device is confirmed experimentally; however, we observed an unexpected angular distribution of reflected rays for the angles lower than 45 degrees, which we associate with the light diffraction and interference between the vertical and deflecting mirrors. The presented solution offers the maturity of edge-emitting laser technology combined with versatility of surface-emitting lasers, including on-wafer testing of emitters and addressability of single light sources.

Automated summary

In this study, a solution is proposed for realizing a surface emitting, 2D array of visible light laser diodes based on AlInGaN semiconductors. The system consists of a horizontal cavity lasing section and a beam deflecting section in the form of 45 degrees inclined planes. These sections are placed near etched vertical cavity mirrors, fabricated by Reactive Ion Beam Etching. The experimental results confirm the operation principle of the device, but unexpected angular distribution of reflected rays for angles lower than 45 degrees is observed, which is attributed to light diffraction and interference between the vertical and deflecting mirrors. The proposed solution combines the maturity of edge-emitting laser technology with the versatility of surface-emitting lasers, including on-wafer testing of emitters and addressability of single light sources.