Journal
MICROMACHINES
Volume 13, Issue 12, Pages -Publisher
MDPI
DOI: 10.3390/mi13122089
Keywords
photodetectors; thin-films; photovoltaics; phototransistors; photodiodes
Categories
Funding
- National Research Foundation of Korea (NRF) - Korean Government (MSIT)
- [NRF-2022R1C1C1004590]
- [NRF-2020M3A9E4104385]
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Zero-biased photodetectors have desirable characteristics including high efficiency, rapid response, and low power operation. By changing the electrode contact geometry or morphological structure of materials, the detector efficiency can be improved, and different combinations of materials can enable or disable selective light detection.
Zero-biased photodetectors have desirable characteristics for potentially next-generation devices, including high efficiency, rapid response, and low power operation. In particular, the detector efficiency can be improved simply by changing the electrode contact geometry or morphological structure of materials, which give unique properties such as energy band bending, photo absorbance and electric field distribution. In addition, several combinations of materials enable or disable the operation of selective wavelengths of light detection. Herein, such recent progresses in photodetector operating at zero-bias voltage are reviewed. Considering the advantages and promises of these low-power photodetectors, this review introduces various zero-bias implementations and reviews the key points.
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