Journal
IEEE JOURNAL OF PHOTOVOLTAICS
Volume 12, Issue 6, Pages 1412-1417Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JPHOTOV.2022.3196827
Keywords
Temperature measurement; Temperature; Lighting; Tunneling; Buffer layers; Voltage; Electrical resistance measurement; Cu(In; Ga)Se2 (CIGS); partial shading; reverse bias; thin-film PV
Funding
- Netherlands Enterprise Agency (RVO) through project Building Integrated PhotoVoltaic Panels on Demand-in The Netherlands [TEID215005]
- Dutch Topteam Energy through project Performance and Electroluminescence Analysis on Reliability and Lifetime of Thin-Film Photovoltaics [TEUE116203]
- TNO through the Early Research Program Sustainability & Reliability for Solar and Other (Opto-)Electronic Thin-Film Devices
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This study introduces a model that describes the behavior of Cu(In,Ga)Se-2 (CIGS) cells under reverse bias caused by partial shading. The model considers the low and non-Ohmic leakage current and explains the sharp increase in current observed in the CIGS reverse characteristics using the Fowler-Nordheim tunneling effect. The model has been validated against measurements at different temperatures and illumination intensities, and can describe the dependencies of the reverse bias behavior on both temperature and illumination.
Partial shading of PV modules can lead to degradation of the shaded cells. The degradation originates from a reverse bias voltage over the shaded cells. In order to mitigate reverse bias damage in Cu(In,Ga)Se-2 (CIGS) modules, a good understanding of the fundamental mechanisms governing the reverse characteristic is required. In this study, a model is introduced that describes this behavior for CIGS cells. In this model, the low and non-Ohmic leakage current is accounted for by the space charge limited current component. A sharp increase in current that is typically observed in the CIGS reverse characteristics can be described by Fowler-Nordheim tunneling. This model has been validated against measurements performed at different temperatures and illumination intensities, and is able to describe the dependencies of the reverse bias behavior on both temperature and illumination.
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