Journal
ADVANCED MATERIALS
Volume 27, Issue 40, Pages 6202-6207Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.201502574
Keywords
electrochemical metallization memories; graphene; interfaces; redox-based resistive switching memories (ReRAM); valence change memories
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Funding
- Greek-German bilateral joint research project G-ReRAM [GER_2316]
- BMBF [03X0140]
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By modification of the electrode-solid-electrolyte interface with graphene, transit from valence change memories (VCM) to electrochemical metallization memories (ECM) in the cell Ta(C)/Ta2O5/Pt is demonstrated, thus, bridging both mechanisms. The ECM operation is discussed in the light of Ta-cation mobility in TaOx. The crucial role of electrochemical processes and moisture in the resistive switching process is also highlighted.
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