HVPE Growth and Characterization of Thick κ-Ga2O3 layers on GaN/Sapphire Templates

Article Nanoscience & Nanotechnology

Structural and electrical properties of thick κ-Ga2O3 grown on GaN/sapphire templates

A. Y. Polyakov et al.

Summary: Thick films (23 μm) of kappa-Ga2O3 were successfully grown on GaN/sapphire templates using Halide Vapor Phase Epitaxy (HVPE). The films exhibited good crystalline quality and surface morphology. They possessed specific properties such as a wide absorption band and deep-level traps.

APL MATERIALS (2022)

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Article Nanoscience & Nanotechnology

Thermodynamically metastable α-, ε- (or κ-), and γ-Ga2O3: From material growth to device applications

Mahitosh Biswas et al.

Summary: The translation elaborates on the properties and growth of gallium oxide (Ga2O3) and its metastable phases, and discusses their doping and electronic properties. The importance of these phases in power electronics and ultraviolet photodetectors is emphasized.

APL MATERIALS (2022)

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Article Physics, Condensed Matter

Pure-phase κ-Ga2O3 layers grown on c-plane sapphire by halide vapor phase epitaxy

Yuewen Li et al.

Summary: Hetero-epitaxial growth of kappa-gallium oxide (Ga2O3) layers on c-plane sapphire substrates was achieved by halide vapor phase epitaxy (HVPE), resulting in high crystal quality pure (001)-oriented kappa-Ga2O3 at 800 degrees C. XRD phi-scan revealed three in-plane rotational domains in the kappa-Ga2O3 layers, with an in-plane epitaxial relationship proposed to be (010) kappa-Ga2O3 //(10 (1) over bar0) Al2O3 and (110) kappa-Ga2O3//(1 (1) over bar 00) Al2O3. The bandgap was calculated to be approximately 5.02eV from the optical transmittance spectrum.

SUPERLATTICES AND MICROSTRUCTURES (2021)

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Article Physics, Applied