4.4 Article

HVPE Growth and Characterization of Thick κ-Ga2O3 layers on GaN/Sapphire Templates

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ELECTROCHEMICAL SOC INC
DOI: 10.1149/2162-8777/acb174

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This study successfully grew Ga2O3 layers with thickness ranging from 10 to 86 μm using halide vapor phase epitaxy (HVPE) on GaN(0001)/sapphire templates. The grown layers were pure (001)-oriented kappa-Ga2O3 phase without admixture of other phases. The best crystal quality was observed in 13-20 μm thick kappa-Ga2O3 layers, while an increase in thickness led to deterioration indicated by broadening of rocking curves. Electrical measurements showed that the grown layers were n-type with decreasing concentration of shallow donors and deep level transient spectroscopy (DLTS) revealed the presence of deep traps with varying energy levels.
Ga2O3 layers with thickness from 10 to 86 mu m were grown by halide vapor phase epitaxy (HVPE) on GaN(0001)/sapphire templates in a hot wall reactor at 570 degrees C, with the growth rate of about 3-4 mu m h(-1). The grown layers consisted of pure (001)-oriented kappa-Ga2O3 polymorph with no admixture of beta-Ga2O3 or alpha-Ga2O3 phases. The narrowest (004) X-ray rocking curves were observed for 13-20 mu m thick kappa-Ga2O3 layers. A further increase in thickness results in deterioration of the crystal quality which is indicated by the broadening of rocking curves. Electrical measurements of the thick layers revealed that they were n-type, with the concentration of shallow donors gradually decreasing from similar to 10(16 )cm(-3) to similar to 10(15 )cm(-3). Deep level transient spectroscopy (DLTS) measurements revealed the presence of deep traps with levels near E-c-0.3 eV, E-c-0.6 eV, E-c-0.7 eV, E-c-0.8 eV, E-c-1 eV, with the E-c-0.8 eV being predominant.

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