4.7 Article

Thermal-Sinterable EGaIn Nanoparticle Inks for Highly Deformable Bioelectrode Arrays

Journal

ADVANCED HEALTHCARE MATERIALS
Volume 12, Issue 10, Pages -

Publisher

WILEY
DOI: 10.1002/adhm.202202531

Keywords

bioelectrodes; ionic elastomers; liquid metals; sintering strategies; soft electronics

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Thermal-sinterable EGaIn nanoparticle inks are prepared by introducing thermal expansion microspheres (TEMs) into EGaIn NP solution. Through the expansion of the heated TEMs, the printed EGaIn NPs can be sintered into electrically conductive paths, achieving highly stretchable bioelectrode arrays with excellent performance. The sintering strategy overcomes the disadvantages of traditional strategies and promotes the application of EGaIn in soft electronics.
Liquid metal (especially eutectic gallium indium, EGaIn) nanoparticle inks overcome the poor wettability of high surface tension EGaIn to elastomer substrates and show great potential in soft electronics. Normally, a sintering strategy is required to break the oxide shells of the EGaIn nanoparticles (EGaIn NPs) to achieve conductive paths. Herein, for the first time, thermal-sinterable EGaIn NP inks are prepared by introducing thermal expansion microspheres (TEMs) into EGaIn NP solution. Through the mechanical pressure induced by the expansion of the heated TEMs, the printed EGaIn NPs can be sintered into electrically conductive paths to achieve highly stretchable bioelectrode arrays, which exhibit giant electromechanical performance (up to 680% strain), good cyclic stability (over 2 x 10(4) cycles), and stable conductivity after high-speed rotation (6000 rpm). Simultaneously, the recording sites are hermetically sealed by ionic elastomer layers, ensuring the complete leakage-free property of EGaIn and reducing the electrochemical impedance of the electrodes (891.16 omega at 1 kHz). The bioelectrode is successfully applied to monitor dynamic electromyographic signals. The sintering strategy overcomes the disadvantages of the traditional sintering strategies, such as leakage of EGaIn, reformation of large EGaIn droplets, and low throughput, which promotes the application of EGaIn in soft electronics.

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