Gas sensing response of ion beam irradiated Ga-doped ZnO thin films

The ion beam induced modified gallium doped ZnO thin films are studied for their gas sensing applications. The Ag9+ and Si6+ irradiated gallium doped zinc oxide thin films were exposed to various concentrations of ethanol and acetone gas for gas sensing applications. The Ag9+ ion irradiated Ga-doped ZnO thin was optimized at different operating temperature. It was observed that gas sensing response for both ethanol and acetone gas increases with increasing Ag9+ ion fluence. This indicates that the swift heavy ions have improved the sensitivity of Ga-doled ZnO thin film by reducing the particle size. The Si6+ ion irradiated Ga-doped ZnO thin films were also exposed to ethanol and acetone gas for gas sensing applications. In comparison to Ag9+ ion irradiated thin film, the film irradiated with Si6+ ion beam exhibits a greater sensing response to both ethanol and acetone gas.

Automated summary

The gas sensing performance of ion beam induced modified gallium doped zinc oxide thin films was studied. The sensitivity of the films was improved by ion irradiation, especially with Si6+ ions. The gas sensing response increased with higher concentrations of ethanol and acetone gases.