4.5 Article

Spin-resolved photoemission study of epitaxially grown MoSe2 and WSe2 thin films

Journal

JOURNAL OF PHYSICS-CONDENSED MATTER
Volume 28, Issue 45, Pages -

Publisher

IOP PUBLISHING LTD
DOI: 10.1088/0953-8984/28/45/454001

Keywords

transition metal dichalcogenides; MoSe2; WSe2; spin-resolved photoemission; ARPES; photoemission

Funding

  1. US DOE, Office of Basic Energy Science [DE-AC02-05CH11231, DE-AC02-76SF00515]
  2. National Research Foundation of Korea (NRF) - Ministry of Science, ICT, and Future Planning [2015R1C1A1A01053065]
  3. Swiss National Science Foundation [PP00P2_144742/1]
  4. National Research Foundation of Korea [2015R1C1A1A01053065] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)

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Few-layer thick MoSe2 and WSe2 possess non-trivial spin textures with sizable spin splitting due to the inversion symmetry breaking embedded in the crystal structure and strong spin-orbit coupling. We report a spin-resolved photoemission study of MoSe2 and WSe2 thin film samples epitaxially grown on a bilayer graphene substrate. We only found spin polarization in the single-and trilayer samples-not in the bilayer sample-mostly along the out-of-plane direction of the sample surface. The measured spin polarization is found to be strongly dependent on the light polarization as well as the measurement geometry, which reveals intricate coupling between the spin and orbital degrees of freedom in this class of material.

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