Recrystallization of Si Nanoparticles in Presence of Chalcogens: Improved Electrical and Optical Properties

Nanocrystals of Si doped with S, Se and Te were synthesized by annealing them in chalcogen vapors in a vacuum at a high temperature range from 800 to 850 degrees C. The influence of the dopant on the structure and morphology of the particles and their optical and electrical properties was studied. In the case of all three chalcogens, the recrystallization of Si was observed, and XRD peaks characteristic of noncubic Si phases were found by means of electronic diffraction for Si doped with S and Se. Moreover, in presence of S and Te, crystalline rods with six-sided and four-sided cross-sections, respectively, were formed, their length reaching hundreds of mu m. Samples with sulfur and selenium showed high conductivity compared to the undoped material.

Automated summary

Nanocrystals of Si doped with S, Se and Te were synthesized at high temperatures and their structure, morphology, and optical and electrical properties were studied. The presence of sulfur and selenium resulted in recrystallization of Si and the formation of crystalline rods with unique cross-sections, while samples doped with sulfur and selenium showed high conductivity.