Synthesis and Oxygen Storage Capacities of Yttrium-Doped CeO2 with a Cubic Fluorite Structure

Doping CeO2 with Y cations was achieved in this study using three strategies: doping only during the hydrothermal process (H-Y-doped CeO2), doping only during the impregnation process (I-Y-doped CeO2), and doping during both the hydrothermal and impregnation processes (H/I-Y-doped CeO2). During the three synthesis strategies of Y-doped CeO2, these Y ions could be incorporated into the CeO2 lattice in the +3 state while holding the cubic fluorite structure, and no impurity phases were detected. Pure CeO2 crystal itself contained a certain number of intrinsic V-O defects, and Y-doping was beneficial for the creation of extrinsic V-O defects. The relative concentrations of V-O defects were quantified by the values of A(592)/A(464) obtained from Raman spectra, which were 1.47, 0.93, and 1.16 for the H-Y-, I-Y-, and H/I-Y-doped CeO2, respectively, and were higher than that of the undoped one (0.67). Moreover, the OSCs of the three Y-doped CeO2 were enhanced, and the sequence of OSCs was: H-Y-doped CeO2 (0.372 mmol/g) > H/I-Y-doped CeO2 (0.353 mmol/g) > I-Y-doped CeO2 (0.248 mmol/g) > Undoped CeO2 (0.153 mmol/g); this result was in good agreement with the Raman spectroscopy results.

Automated summary

In this study, CeO2 was doped with Y cations using three strategies. The Y ions were incorporated into the CeO2 lattice in the +3 state while maintaining the cubic fluorite structure. The concentration of V-O defects was quantified using Raman spectroscopy, and it was found that Y-doping increased the concentration of extrinsic V-O defects. The oxygen storage capacities (OSCs) of the Y-doped CeO2 were enhanced compared to undoped CeO2, with the H-Y-doped CeO2 showing the highest OSC.