Short-Term Memory Characteristics of IGZO-Based Three-Terminal Devices

A three-terminal synaptic transistor enables more accurate controllability over the conductance compared with traditional two-terminal synaptic devices for the synaptic devices in hardware-oriented neuromorphic systems. In this work, we fabricated IGZO-based three-terminal devices comprising HfAlOx and CeOx layers to demonstrate the synaptic operations. The chemical compositions and thicknesses of the devices were verified by transmission electron microscopy and energy dispersive spectroscopy in cooperation. The excitatory post-synaptic current (EPSC), paired-pulse facilitation (PPF), short-term potentiation (STP), and short-term depression (STD) of the synaptic devices were realized for the short-term memory behaviors. The IGZO-based three-terminal synaptic transistor could thus be controlled appropriately by the amplitude, width, and interval time of the pulses for implementing the neuromorphic systems.

Automated summary

A three-terminal synaptic transistor based on IGZO was fabricated, and its chemical compositions and thicknesses were verified using transmission electron microscopy and energy dispersive spectroscopy. The synaptic devices demonstrated short-term memory behaviors such as excitatory post-synaptic current (EPSC), paired-pulse facilitation (PPF), short-term potentiation (STP), and short-term depression (STD). The IGZO-based three-terminal synaptic transistor could be controlled by the amplitude, width, and interval time of the pulses for implementing neuromorphic systems.