Defect levels in Cu(In,Ga)Se2 studied using capacitance and photocurrent techniques

This work contributes to the discussion on defect levels in Cu(In, Ga)Se-2 photovoltaic material. CuInSe2- and Cu(In, Ga)Se-2-based Schottky junctions, solar cells and thin films were investigated using complementary capacitance and current spectroscopic techniques. Depending on the applied technique and type of investigated structure, six different signals were observed. Out of the signals identified, three were ascribed to responses from bulk defects-two electron and one hole trap. The remainder were discussed in light of available in-literature models including carrier mobility freeze-out and non-ohmic back junction.