Journal
ADVANCED ENERGY MATERIALS
Volume 13, Issue 9, Pages -Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/aenm.202200796
Keywords
2D drift-diffusion; back-contact; ideality factor; micro-photoluminescence; perovskite solar cells
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Time-dependent Suns-V-OC and Suns-photoluminescence analysis were used to study two different structures of back-contact perovskite solar cells. The presence of a mesoporous TiO2 layer was found to reduce recombination and increase the open-circuit voltage. 2D time-dependent drift-diffusion simulations were able to explain the experimental results and revealed the significant impact of non-uniform ion distribution on the photoluminescence intensity and ideality factor.
The efficiency of back-contact perovskite solar cells has steadily increased over the past few years and now exceeds 11%, with interest in these devices shifting from proof-of-concept to viable technology. In order to make further improvements in the efficiency of these devices it is necessary to understand the cause of the low fill factor, low open-circuit voltage (V-OC), and severe hysteresis. Here a time-dependent Suns-V-oc and Suns-photoluminescence (PL) analysis are performed to monitor the transient ideality factor spatially. Two sets of quasi-interdigitated back-contact perovskite solar cells are studied; cells with and without a mesoporous TiO2 layer. Maps of the PL intensity and ideality factor resemble the periodic structure of the back-contact electrodes and the transient behavior exhibit distinct features such as a temporary variation in the periodicity of the modulation, spatial phase shifting, and phase offsets. It is shown that the presence of the mesoporous layer greatly reduces recombination, increasing the V-OC by 0.12 V. Coupled 2D time-dependent drift-diffusion simulations allow the experimental results to be modeled, and replicate the key features observed experimentally. They reveal that non-uniform ion distribution along the transport layer interfaces can drastically alter the PL intensity and ideality factor throughout the device.
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