Journal
ADVANCED ENERGY MATERIALS
Volume -, Issue -, Pages -Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/aenm.202203241
Keywords
balanced electron; hole mobility; binary heterojunctions; interface morphology; nonfullerene organic photovoltaics; thermal annealing
Categories
Funding
- Agency for Management of University and Research Grants (AGAUR) [2019 FI_B01102]
- Spanish Ministerio de Ciencia, Innovacion [PDI2021-128342OB-I00]
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Finding an effective approach to suppress trap formation is important for enhancing the performance of nonfullerene organic photovoltaic devices. In this study, a prethermal treatment approach is used to optimize the PEDOT:PSS/PM6:Y7 films and interface morphologies, resulting in a significant increase in short-circuit current density (J(SC)) and power conversion efficiency (PCE). The optimized devices exhibit better blend morphology, improved exciton dissociation probabilities, and balanced electron/hole mobility, leading to enhanced J(SC) and PCE.
Finding an effective approach to suppress trap formation is a potential route for enhancing the performance of nonfullerene organic photovoltaic (NF-OPVs) devices. Here, an extraordinary short-circuit current density (J(SC)) value of 32.65 mA cm(-2) is achieved, higher than the state-of-the art NF-OPVs reported, reaching a high power conversion efficiency (PCE) of 17.92%. This remarkable enhancement is exhibited through the fine-tuning of PEDOT:PSS/PM6:Y7 films and interface morphologies via applying the prethermal treatment approach (Pre-TT) to the devices, which exhibit J(SC) and PCE enhancement of 21% and 8%, respectively, compared to the pristine devices. Accordingly, the dependence of the J(SC) upon the Pre-TT approach through a range of morphological, optical, electrical, and advanced transient measurements is investigated. The Pre-TT-based films are found to possess optimal smooth blend morphology with better dispersity owing to reduced domain size. Moreover, the measurements show that the optimized treated devices present higher exciton dissociation probabilities and generation rate of the free charge carriers, showing an ideal balanced electron/hole mobility that reveals the J(SC) and PCE enhancement. Hence, Pre-TT approach provides a facile passivation strategy that reduces the trap state density of the blend film, improves interface charge transfer, allows balanced electron/hole mobility, and thus promotes device performance.
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