Journal
JOURNAL OF PHYSICS D-APPLIED PHYSICS
Volume 49, Issue 17, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.1088/0022-3727/49/17/175101
Keywords
InGaN; hydrogen treatment; indium incorporation; local states
Categories
Funding
- National Natural Science Foundation of China [61334009]
- National High Technology Research and Development Program of China [2014AA032604]
Ask authors/readers for more resources
The challenge for improving the internal quantum efficiency (IQE) of InGaN-based light emitting diodes (LED) in the green light range is referred to as the 'green gap'. However the IQE of InGaN-based LEDs often drops when the emission peak wavelength is adjusted through reducing the growth temperature. Although hydrogen (H-2) can improve surface morphology, it reduces the indium incorporation significantly. Here, a novel usage of H-2 treatment on the GaN barrier before the InGaN quantum well is demonstrated to enhance indium incorporation efficiency and improve the IQE simultaneously for the first time. The mechanism behind it is systematically investigated and explained in detail. The possible reason for this phenomenon is the strain relieving function by the undulant GaN barrier surface after H-2 treatment. Test measurements show that applying 0.2 min H-2 treatment on the barrier would reduce defects and enhance indium incorporation, which would improve the localization effect and finally lead to a higher IQE. Although further increasing the treatment time to 0.4 min incorporates more indium atoms, the IQE decreases at the expense of more defects and a larger polarization field than the 0.2 min sample.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available