Journal
JOURNAL OF PHYSICS D-APPLIED PHYSICS
Volume 49, Issue 23, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.1088/0022-3727/49/23/235101
Keywords
deep-ultraviolet; light-emitting diodes; optoelectronics; optical devices
Categories
Funding
- A-STEP programs [AS2525010J, AS2715025R]
- PRESTO program from Japan Science and Technology Agency (JST)
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The current crowding is an especially severe issue in AlGaN-based deep-ultraviolet (DUV) light-emitting diodes (LEDs) because of the low conductivity of the n-AlGaN cladding layer that has a high Al fraction. We theoretically investigated the improvement in internal quantum efficiency and total resistances in DUV-LEDs with an emission wavelength of 265 nm by a well-designed p-electrode geometry to produce uniform current spreading. As a result, the wall-plug efficiency was enhanced by a factor of 60% at an injection current of 350 mA in the designed uniform-current-spreading p-electrode LED when compared with an LED with a conventional cross-bar p-electrode pattern.
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