Journal
THIN SOLID FILMS
Volume 763, Issue -, Pages -Publisher
ELSEVIER SCIENCE SA
DOI: 10.1016/j.tsf.2022.139568
Keywords
Silicon nitride; Ellipsometry; Chemical vapor deposition; Sputtering; Optical characterization; Thin film
Categories
Funding
- Independent Research Fund Denmark (DFF), Denmark [8022-00387B]
- Danish National Center for Micro-and Nanofabrication (DTU Nanolab)
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This study compares the optical properties of silicon nitride thin films deposited by different methods. The analysis shows that the deposition method has a significant influence on the optical properties, especially in the ultraviolet wavelength range.
We present a comparative study of optical properties of silicon nitride thin films deposited by reactive radio -frequency (R-RF) sputtering, low pressure chemical vapor deposition (LPCVD) and plasma-enhanced chemical vapor deposition (PECVD). For LPCVD process, two different proportions of mixed gases were used (LPCVD (A) and LPCVD (B) processes) and PECVD deposition were conducted in three regimes: low frequency (LF), mixed frequency and high frequency. Dielectric functions were extracted from ellipsometric measurements for the wavelength range from ultraviolet to near-infrared wavelengths, spanning from 210 nm to 1690 nm. To understand how different deposition parameters affect the optical properties of thin films, additional structures and composite analysis was done by using X-ray photoelectron spectroscopy, grazing incidence X-ray diffraction, X-ray reflectometry, atomic force microscopy, reflection electron energy loss spectroscopy, Fourier-transform infrared spectroscopy and stress measurements. The series of analysis show that the influence of deposition method on optical properties is significant especially for in the range of 200 nm-400 nm. For these UV wavelengths, LPCVD (A)-deposited films give a transparency window at the shortest wavelength up to 275 nm, while R-RF-sputtering and PECVD (LF) lead to transparency windows starting up to 320 nm wavelengths. Hence, appropriate techniques and recipes should be selected to account for various peculiarities in optical and structural properties of silicon nitride films towards their potential applications in photonic and nanostructured systems.
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