Characterization of sputtered nanocrystalline gallium nitride for electron selective contact of crystalline silicon solar cell

We investigated properties of sputtered nanocrystalline gallium nitride (nc-GaN) to discuss the potential of the nc-GaN as an electron selective contact in a silicon heterojunction (SHJ) solar cell. Modeling of nc-GaN/ crystalline silicon (c-Si) heterojunction was carried out based on the analysis of the deposited nc-GaN films and nc-GaN/c-Si heterojunction devices. The simulation using the developed model well reproduced the current -voltage characteristics of a SHJ solar cell with nc-GaN layer. The device simulation pointed out that it is important to use nc-GaN with electron concentration larger than 5 x 1018 cm-3 and metal contact with work function less than 3.9 eV to obtain good solar cell performance.

Automated summary

This study investigated the properties of sputtered nanocrystalline gallium nitride (nc-GaN) and its potential as an electron selective contact in a silicon heterojunction (SHJ) solar cell. Simulation of the nc-GaN/crystalline silicon (c-Si) heterojunction was performed based on the analysis of deposited nc-GaN films and nc-GaN/c-Si heterojunction devices. The simulation results indicated that using nc-GaN with an electron concentration greater than 5 x 1018 cm-3 and a metal contact with a work function less than 3.9 eV is crucial for obtaining good solar cell performance.