Formation of the incommensurate Si(111)-∼5.4 x ∼5.4-In surface

We find that the 5 x 5 reconstruction can form only by indium deposition on the `rect' structure of the Si(111)root 7 x root 3v -In surface in a step-flow-like growth manner, which was previously known to form by deposition of the 7,7,8,8-tetracyanoquinodimethane (TCNQ) molecules on the root 7v x root 3v -rect surface. The 5 x 5 reconstruction is found to be an incommensurate structure that should be expressed as similar to 5.4 x similar to 5.4, instead of the 5 x 5. The similar to 5.4 x similar to 5.4 surface consists of a triple indium layer with about 3.1 ML coverage, and has a strong insulating character, in contrast to the metallic electronic states on the root 7 x root 3v -rect surface. The similar to 5.4 x similar to 5.4 surface is considered to be rather unstable at RT.

Automated summary

We discovered that the 5 x 5 reconstruction on the Si(111)root 7 x root 3v -In surface is formed through indium deposition in a step-flow-like growth manner. This is different from the 7,7,8,8-tetracyanoquinodimethane (TCNQ) molecule deposition on the root 7v x root 3v -rect surface that was previously known. The 5 x 5 reconstruction is an incommensurate structure and the similar to 5.4 x similar to 5.4 surface is considered unstable at room temperature.