Pressure sensing of Ga2O3 thin film

In this paper, a Ga2O3-based pressure sensor is introduced via metalorganic chemical vapor deposition thin film growth technique. As an important semiconductor materials, it could achieve some functional electronics and optoelectronics, while Ga2O3-based pressure sensor is less investigated, inspite of that the natural property endows it the possibility. Here, the fabricated Ga2O3-based pressure sensor displayed decent sensing performance responding to various pressures. Under pressure of 5 kPa, the current increase two of orders with respect to the current without any additional pressure. Moreover, the response/release times were 0.18 s/0.15 s, 0.27 s/0.21 s, 0.32 s/0.23 s, and 0.38 s/0.24 s under different pressures of 1, 5, 10 and 20 kPa. In all, this work provides a possible route for constructing smart pressure sensor based on functional Ga2O3 along with good sensing behaviors.

Automated summary

In this paper, a Ga2O3-based pressure sensor is introduced using the technique of metalorganic chemical vapor deposition thin film growth. Although Ga2O3 is an important semiconductor material for functional electronics and optoelectronics, there has been limited research on Ga2O3-based pressure sensors. However, this study demonstrates that the fabricated Ga2O3-based pressure sensor exhibits good sensing performance for different pressures. The sensor shows an increase in current by two orders of magnitude under a pressure of 5 kPa. Additionally, the response/release times were measured under different pressures ranging from 1 to 20 kPa. This work provides a potential method for constructing smart pressure sensors based on functional Ga2O3.