Self-powered solar-blind deep-UV photodetector based on CuI/Ga2O3 heterojunction with high sensitivity

In this work, a high-performance self-powered deep-ultraviolet (UV) CuI/Ga2O3 heterojunction photodetector was proposed by pulsed laser deposition (PLD) and vacuum thermal evaporation method. The device is particularly responsive to 254 nm deep-UV illumination as well as exhibits excellent and stable self-powered performance with an on-off ratio of 1 x 10(4), R of 1.44 mA/W and D* of 5.94 x 10(11) Jones at 0 V bias. Even under weak deep-UV light of 2.7 mu W center dot cm(-2), the device still exhibits outstanding photo-response properties with D* of 1.76 x 10(12) Jones. The photodetector exhibits superior performance compared to other previously reported self-powered photodetectors based on Ga2O3. Our work offers great potential to fabricate deep-UV detection devices with high sensitivity.

Automated summary

In this work, a high-performance self-powered deep-ultraviolet CuI/Ga2O3 heterojunction photodetector was proposed, which was fabricated using pulsed laser deposition and vacuum thermal evaporation methods. The device showed excellent and stable self-powered performance with an on-off ratio of 1 x 10(4), R of 1.44 mA/W, and D* of 5.94 x 10(11)Jones at 0 V bias. Even under weak deep-UV light of 2.7 μW/cm2, the device still exhibited outstanding photo-response properties with D* of 1.76 x 10(12)Jones. The photodetector demonstrated superior performance compared to other previously reported self-powered photodetectors based on Ga2O3. This work has great potential for fabricating deep-UV detection devices with high sensitivity.