4.6 Article

An Energy-Efficient BJT-Based Temperature Sensor with ±0.8 °C (3σ) Inaccuracy from-50 to 150 °C

Journal

SENSORS
Volume 22, Issue 23, Pages -

Publisher

MDPI
DOI: 10.3390/s22239381

Keywords

CMOS temperature sensor; energy-efficient; leakage; cascoded FIA

Funding

  1. Joint R&D Fund of Beijing Smartchip Microelectronics Technology Co., Ltd. (Beijing, China)
  2. 2021 Key Science and Technology Program of Ningbo City
  3. [2021Z087]

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This article presents an energy-efficient temperature sensor based on BIT, which utilizes an incremental Delta-Sigma ADC for readout and achieves low power consumption and accurate temperature measurement.
This article presents an energy-efficient BIT-based temperature sensor. The output of sensing front-ends is modulated by employing an incremental Delta-Sigma, ADC as a readout interface. The cascoded floating-inverter-based dynamic amplifier (FIA) is used as the integrator instead of the conventional operational transconductance amplifier (OTA) to achieve a low power consumption. To enhance the accuracy, chopping and dynamic element matching (DEM) are applied to eliminate the component mismatch error while beta-compensation resistor and optimized bias current are used to minimize the effect of beta variation. Fabricated in a standard 180-nm CMOS process, this sensor has an active area of 0.13 mm(2). While dissipating only 45.7 mu W in total, the sensor achieves an inaccuracy of +/- 0.8 degrees C (3 sigma) from -50 degrees C to 150 degrees C after one-point calibration.

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