Dawn of nitride ferroelectric semiconductors: from materials to devices

III-nitride semiconductors are promising optoelectronic and electronic materials and have been extensively investigated in the past decades. New functionalities, such as ferroelectricity, ferromagnetism, and superconductivity, have been implanted into III-nitrides to expand their capability in next-generation semiconductor and quantum technologies. The recent experimental demonstration of ferroelectricity in nitride materials, including ScAl(Ga)N, boron-substituted AlN, and hexagonal BN, has inspired tremendous research interest. Due to the large remnant polarization, high breakdown field, high Curie temperature, and significantly enhanced piezoelectric, linear and nonlinear optical properties, nitride ferroelectric semiconductors have enabled a wealth of applications in electronic, ferroelectronic, acoustoelectronic, optoelectronic, and quantum devices and systems. In this review, the development of nitride ferroelectric semiconductors from materials to devices is discussed. While expounding on the unique advantages and outstanding achievements of nitride ferroelectrics, the existing challenges and promising prospects have been also discussed.

Automated summary

III-nitride semiconductors have been extensively studied as promising optoelectronic and electronic materials in the past decades. Recent experimental demonstrations of ferroelectricity in nitride materials have led to significant research interest and expanded their potential in next-generation technologies. Nitride ferroelectric semiconductors, with their unique advantages such as high polarization, breakdown field, Curie temperature, and enhanced optical properties, have enabled a wide range of applications in various devices and systems. This review discusses the development of nitride ferroelectric semiconductors from materials to devices, highlighting their advantages, achievements, challenges, and prospects.